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NGD8205AN Schematic ( PDF Datasheet ) - ON Semiconductor

Teilenummer NGD8205AN
Beschreibung Ignition IGBT
Hersteller ON Semiconductor
Logo ON Semiconductor Logo 




Gesamt 7 Seiten
NGD8205AN Datasheet, Funktion
NGD8205N, NGD8205AN
Ignition IGBT
20 Amp, 350 Volt, NChannel DPAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Overvoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
Ideal for CoilonPlug and DriveronCoil Applications
DPAK Package Offers Smaller Footprint for Increased Board Space
GateEmitter ESD Protection
Temperature Compensated GateCollector Voltage Clamp Limits
Stress Applied to Load
Integrated ESD Diode Protection
Low Threshold Voltage for Interfacing Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
Optional Gate Resistor (RG) and GateEmitter Resistor (RGE)
These are PbFree Devices
Applications
Ignition Systems
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
CollectorEmitter Voltage
CollectorGate Voltage
GateEmitter Voltage
Collector CurrentContinuous
@ TC = 25°C Pulsed
VCES
VCER
VGE
IC
390
390
"15
20
50
V
V
V
ADC
AAC
Continuous Gate Current
Transient Gate Current (t2 ms, f100 Hz)
ESD (ChargedDevice Model)
IG
IG
ESD
1.0 mA
20 mA
2.0 kV
ESD (Human Body Model)
R = 1500 W, C = 100 pF
ESD
kV
8.0
ESD (Machine Model) R = 0 W, C = 200 pF ESD 400 V
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD 125 W
0.83 W/°C
Operating & Storage Temperature Range TJ, Tstg 55 to +175 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2012
January, 2012 Rev. 9
1
http://onsemi.com
20 A, 350 V
VCE(on) = 1.3 V @
IC = 10 A, VGE . 4.5 V
C
G RG
RGE
E
4
12
3
DPAK
CASE 369C
STYLE 7
MARKING DIAGRAM
1
G
C
E
YWW
NGD
8205xG
C
Y
WW
NGD8205x
x
G
= Year
= Work Week
= Device Code
= N or A
= PbFree Package
ORDERING INFORMATION
Device
Package
Shipping
NGD8205NT4G
DPAK 2500 / Tape & Reel
(PbFree)
NGD8205ANT4G DPAK 2500 / Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NGD8205N/D






NGD8205AN Datasheet, Funktion
NGD8205N, NGD8205AN
100 Duty Cycle = 0.5
0.2
10
0.1
0.05
0.02
1 0.01
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.01 0.1
t,TIME (S)
1
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TA = P(pk) RqJA(t)
For D=1: RqJC X R(t) for t 0.1 s
10 100 1000
Figure 13. Minimum Pad Transient Thermal Resistance
(Nonnormalized JunctiontoAmbient)
10
1 Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
0.000001
Single Pulse
0.00001
0.0001
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TA = P(pk) RqJC(t)
0.001
0.01
t,TIME (S)
0.1
1
10
Figure 14. Best Case Transient Thermal Resistance
(Nonnormalized JunctiontoCase Mounted on Cold Plate)
http://onsemi.com
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