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PDF NGB8207ABN Data sheet ( Hoja de datos )
| Número de pieza | NGB8207ABN | |
| Descripción | Ignition IGBT | |
| Fabricantes | ON Semiconductor | |
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NGB8207AN, NGB8207ABN
Ignition IGBT
20 A, 365 V, N−Channel D2PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Overvoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
• Ideal for Coil−on−Plug and Driver−on−Coil Applications
• Gate−Emitter ESD Protection
• Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
• Integrated ESD Diode Protection
• Low Threshold Voltage for Interfacing Power Loads to Logic or
Microprocessor Devices
• Low Saturation Voltage
• High Pulsed Current Capability
• Minimum Avalanche Energy − 500 mJ
• Gate Resistor (RG) = 70 W
• This is a Pb−Free Device
Applications
• Ignition Systems
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Collector−Emitter Voltage
Gate−Emitter Voltage
Collector Current−Continuous
@ TC = 25°C − Pulsed
VCES
VGE
IC
365
$15
20
50
V
V
ADC
AAC
Continuous Gate Current
Transient Gate Current (t ≤ 2 ms, f ≤ 100 Hz)
ESD (Charged−Device Model)
IG
IG
ESD
1.0 mA
20 mA
2.0 kV
ESD (Human Body Model)
R = 1500 W, C = 100 pF
ESD
kV
8.0
ESD (Machine Model) R = 0 W, C = 200 pF
ESD
500
V
TDoetraaltPeoawbeorveDi2s5s°ipCat(iNonot@e 1T) C = 25°C
PD
165 W
1.1 W/°C
Operating & Storage Temperature Range
TJ, Tstg
−55 to
+175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Assuming infinite heatsink Case−to−Ambient
© Semiconductor Components Industries, LLC, 2011
December, 2011 − Rev. 1
1
http://onsemi.com
20 AMPS, 365 VOLTS
VCE(on) = 1.75 V
Typ @ IC = 10 A, VGE . 4.5 V
C
G RG
RGE
E
D2PAK
CASE 418B
1 STYLE 4
MARKING DIAGRAM
4
Collector
NGB
8207AxG
AYWW
13
Gate
2
Emitter
Collector
NGB8207Ax = Device Code
x = N or B
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
NGB8207ANT4G
NGB8207ABNT4G
D2PAK
(Pb−Free)
D2PAK
(Pb−Free)
800 / Tape & Reel
800 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NGB8207AN/D
1 page  
NGB8207AN, NGB8207ABN
TYPICAL ELECTRICAL CHARACTERISTICS
60 60
50
6.0 V
VCE ≥ 5.0 V
50
TJ = −40°C
40
5.0 V
40
TJ = 25°C
4.5 V
30
4.0 V
30
TJ = 175°C
20 3.5 V
3.0 V
10
VGE = 2.5 V
0
0 1 2 3 4 5 6 7 8 9 10
VCE, COLLECTOR−TO−EMITTER VOLTAGE (V)
Figure 7. On−Region Characteristics
@ TJ = 1755C
20
10
0
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VGE, GATE−TO−EMITTER VOLTAGE (V)
Figure 8. Transfer Characteristics
10,000
1000
100
10
VCE = −24 V
VCE = 320 V
1
0.1
−40 −20
VCE = 250 V
0 20 40 60 80 100 120 140 160 180
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Collector−to−Emitter Leakage
Current vs. Junction Temperature
2.0
1.75
IC = 1 mA, VCE = VGE
1.5
1.25
1.0
0.75
0.5
−40 −20
0 20 40 60 80 100 120 140 160 180
TJ, JUNCTION TEMPERATURE (°C)
Figure 10. Gate Threshold Voltage vs.
Temperature
10,000
1000
TJ = 25°C
VGE = 0 V
Ciss
100
10
1
0
Coss
Crss
20 40 60 80 100 120 140 160 180 200
COLLECTOR−TO−EMITTER VOLTAGE (V)
Figure 11. Capacitance Variation
10
tr
td(off)
tf
1
td(on)
VCC = 14 V
VGE = 5.0 V
RL = 1.0 W
RG = 1 kW
0.1
−40 −15 10 35 60 85 110 135 160 185
TEMPERATURE (°C)
Figure 12. Resistive Switching Time Variation
vs. Temperature
http://onsemi.com
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