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NGB8207BN Schematic ( PDF Datasheet ) - ON Semiconductor

Teilenummer NGB8207BN
Beschreibung Ignition IGBT
Hersteller ON Semiconductor
Logo ON Semiconductor Logo 




Gesamt 7 Seiten
NGB8207BN Datasheet, Funktion
NGB8207N, NGB8207BN
Ignition IGBT
20 A, 365 V, NChannel D2PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Overvoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
Ideal for CoilonPlug and DriveronCoil Applications
GateEmitter ESD Protection
Temperature Compensated GateCollector Voltage Clamp Limits
Stress Applied to Load
Integrated ESD Diode Protection
Low Threshold Voltage for Interfacing Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
Minimum Avalanche Energy 500 mJ
Gate Resistor (RG) = 70 W
These are PbFree Devices
Applications
Ignition Systems
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
CollectorEmitter Voltage
GateEmitter Voltage
Collector CurrentContinuous
@ TC = 25°C Pulsed
Continuous Gate Current
Transient Gate Current (t 2 ms, f 100 Hz)
ESD (ChargedDevice Model)
VCES
VGE
IC
IG
IG
ESD
365
$15
20
50
1.0
20
2.0
V
V
AADACC
mA
mA
kV
ESD (Human Body Model)
R = 1500 W, C = 100 pF
ESD
kV
8.0
ESD (Machine Model) R = 0 W, C = 200 pF
ESD
500
V
Total Power Dissipation @ TC = 25°C
Derate above 25°C (Note 1)
PD 165 W
1.1 W/°C
Operating & Storage Temperature Range
TJ, Tstg
55 to
+175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Assuming infinite heatsink CasetoAmbient
© Semiconductor Components Industries, LLC, 2011
December, 2011 Rev. 1
1
http://onsemi.com
20 AMPS, 365 VOLTS
VCE(on) = 1.5 V Typ @
IC = 10 A, VGE . 4.5 V
C
G RG
RGE
E
D2PAK
CASE 418B
STYLE 4
1 MARKING DIAGRAM
4
Collector
NGB
8207xG
AYWW
13
Gate
2
Emitter
Collector
NGB8207x = Device Code
x = N or B
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
ORDERING INFORMATION
Device
Package
Shipping
NGB8207NT4G D2PAK 800 / Tape & Reel
(PbFree)
NGB8207BNT4G D2PAK 800 / Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NGB8207N/D






NGB8207BN Datasheet, Funktion
NGB8207N, NGB8207BN
1000
VCC = 300 V IC = 10 A
VGE = 5.0 V L = 300 mH
RG = 1000 W
100
TYPICAL ELECTRICAL CHARACTERISTICS
100
VGE = 4.0 V
tr
Single Pulse
TC = 25°C
10
10 ms
10
1
25 50
td(on)
tf
td(off)
75 100 125
TEMPERATURE (°C)
150 175
100 ms
VCE(on) LIMIT
1 THERMAL LIMIT
PACKAGE LIMIT
Mounted on 2sq. FR4 board (1sq.
0.1 2 oz. Cu 0.06thick single sided)
1 10 100
1 ms
10 ms
dc
1000
VCE, COLLECTOREMITTER VOLTAGE (V)
Figure 13. Inductive Switching Time Variation
vs. Temperature
Figure 14. Forward Biased Safe Operating
Area
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.000001
Single Pulse
0.00001
0.0001
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.001
t,TIME (S)
0.01
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TA = P(pk) RqJC(t)
0.1 1
Figure 15. Best Case Transient Thermal Resistance
(Nonnormalized JunctiontoCase Mounted on Cold Plate)
http://onsemi.com
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