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NGD18N40CLBT4G Schematic ( PDF Datasheet ) - ON Semiconductor

Teilenummer NGD18N40CLBT4G
Beschreibung Ignition IGBT
Hersteller ON Semiconductor
Logo ON Semiconductor Logo 




Gesamt 8 Seiten
NGD18N40CLBT4G Datasheet, Funktion
NGD18N40CLB,
NGD18N40ACLB
Ignition IGBT, 18 A, 400 V
N−Channel DPAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Over−Voltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
Ideal for Coil−on−Plug Applications
DPAK Package Offers Smaller Footprint for Increased Board Space
Gate−Emitter ESD Protection
Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
Integrated ESD Diode Protection
New Design Increases Unclamped Inductive Switching (UIS) Energy
Per Area
Low Threshold Voltage Interfaces Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
Optional Gate Resistor (RG) and Gate−Emitter Resistor (RGE)
Emitter Ballasting for Short−Circuit Capability
These are Pb−Free Devices
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Collector−Emitter Voltage
Collector−Gate Voltage
Gate−Emitter Voltage
Collector Current−Continuous
@ TC = 25°C − Pulsed
ESD (Human Body Model)
R = 1500 Ω, C = 100 pF
VCES
VCER
VGE
IC
ESD
430 VDC
430 VDC
18 VDC
15 ADC
50 AAC
kV
8.0
ESD (Machine Model) R = 0 Ω, C = 200 pF
ESD 800 V
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD 115 Watts
0.77 W/°C
Operating and Storage Temperature Range
TJ, Tstg −55 to
+175
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
www.onsemi.com
18 AMPS, 400 VOLTS
VCE(on) 3 2.0 V @
IC = 10 A, VGE . 4.5 V
C
G RG
RGE
12
3
E
4 DPAK
CASE 369C
STYLE 7
MARKING DIAGRAM
1
Gate
2
Collector
YWW
G18
N40xG
4
Collector
3
Emitter
G18N40x
Y
WW
G
= Device Code
x = B or A
= Year
= Work Week
= Pb−Free Device
ORDERING INFORMATION
Device
Package
Shipping
NGD18N40CLBT4G DPAK
2500/Tape &
(Pb−Free)
Reel
NGD18N40ACLBT4G DPAK
2500/Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
December, 2014 − Rev. 9
1
Publication Order Number:
NGD18N40CLB/D






NGD18N40CLBT4G Datasheet, Funktion
100
DC
10
1
0.1
NGD18N40CLB, NGD18N40ACLB
100
1 ms
10 ms
100 ms
100 μs
10 DC
1
0.1
100 ms
100 μs
1 ms
10 ms
0.01
1
10 100 1000
COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 13. Single Pulse Safe Operating Area
(Mounted on an Infinite Heatsink at TA = 255C)
0.01
1
10 100 1000
COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 14. Single Pulse Safe Operating Area
(Mounted on an Infinite Heatsink at TA = 1255C)
100 100
t1 = 1 ms, D = 0.05
t1 = 1 ms, D = 0.05
10
t1 = 2 ms, D = 0.10
10
t1 = 2 ms, D = 0.10
t1 = 3 ms, D = 0.30
t1 = 3 ms, D = 0.30
11
0.1 0.1
0.01
1
10 100 1000
COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 15. Pulse Train Safe Operating Area
(Mounted on an Infinite Heatsink at TC = 255C)
0.01
1
10 100 1000
COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 16. Pulse Train Safe Operating Area
(Mounted on an Infinite Heatsink at TC = 1255C)
VBATT = 16 V
RL = 0.1 W
5.0 V
L = 10 mH
VIN RG = 1 kW
VBATT = 16 V
RL = 0.1 W
5.0 V
L = 10 mH
VIN RG = 1 kW
RS = 55 mW
Figure 17. Circuit Configuration for
Short Circuit Test #1
www.onsemi.com
6
Figure 18. Circuit Configuration for
Short Circuit Test #2

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