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PDF NGD8201B Data sheet ( Hoja de datos )
| Número de pieza | NGD8201B | |
| Descripción | Ignition IGBT | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de NGD8201B (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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NGD8201B
Ignition IGBT, 20 A, 400 V
N−Channel DPAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Over−Voltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
• Ideal for Coil−on−Plug Applications
• DPAK Package Offers Smaller Footprint for Increased Board Space
• Gate−Emitter ESD Protection
• Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
• Integrated ESD Diode Protection
• New Design Increases Unclamped Inductive Switching (UIS) Energy
Per Area
• Low Threshold Voltage Interfaces Power Loads to Logic or
Microprocessor Devices
• Low Saturation Voltage
• High Pulsed Current Capability
• Emitter Ballasting for Short−Circuit Capability
• These are Pb−Free Devices
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Collector−Emitter Voltage
Collector−Gate Voltage
Gate−Emitter Voltage
Collector Current−Continuous
@ TC = 25°C − Pulsed
ESD (Human Body Model)
R = 1500 Ω, C = 100 pF
VCES
VCER
VGE
IC
ESD
430 VDC
430 VDC
18 VDC
15 ADC
50 AAC
kV
8.0
ESD (Machine Model) R = 0 Ω, C = 200 pF
ESD 800 V
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD 115 Watts
0.77 W/°C
Operating and Storage Temperature Range
TJ, Tstg −55 to
+175
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
www.onsemi.com
20 AMPS, 400 VOLTS
VCE(on) 3 1.8 V @
IC = 10 A, VGE . 4.5 V
C
G RG
RGE
12
3
E
4 DPAK
CASE 369C
STYLE 7
MARKING DIAGRAM
1
Gate
2
Collector
AYWW
NGD
8201BG
4
Collector
3
Emitter
NGD8201B = Device Code
A = Assemlby Location
Y = Year
WW = Work Week
G = Pb−Free Device
ORDERING INFORMATION
Device
Package
Shipping†
NGD8201BNT4G
DPAK 2500/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 3
1
Publication Order Number:
NGD8201B/D
1 page  
NGD8201B
1000
100 Duty Cycle = 0.5
0.2
0.1
10
0.05
0.02
0.01
1
0.1
Single Pulse
0.01
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TA = P(pk) RqJA(t)
RqJC X R(t) for t ≤ 0.2 s
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10 100 1000
t,TIME (S)
Figure 6. Transient Thermal Resistance (Non−normalized Junction−to−Ambient mounted on minimum pad area)
www.onsemi.com
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NGD8201B.PDF ] | |
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