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NP32N055HHE Schematic ( PDF Datasheet ) - Renesas

Teilenummer NP32N055HHE
Beschreibung N-CHANNEL POWER MOSFET
Hersteller Renesas
Logo Renesas Logo 




Gesamt 6 Seiten
NP32N055HHE Datasheet, Funktion
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP32N055HHE, NP32N055IHE, NP32N055SHE
SWITCHING
N-CHANNEL POWER MOSFET
DESCRIPTION
These products are N-Channel MOS Field Effect
Transistors designed for high current switching applications.
FEATURES
Channel temperature 175 degree rated
Super low on-state resistance
RDS(on) = 25 mMAX. (VGS = 10 V, ID = 16 A)
Low Ciss : Ciss = 1100 pF TYP.
Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP32N055HHE
NP32N055IHE Note
TO-251 (JEITA) / MP-3
TO-252 (JEITA) / MP-3Z
NP32N055SHE
TO-252 (JEDEC) / MP-3ZK
Note Not for new design.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
55
Gate to Source Voltage
VGSS
±20
Drain Current (DC)
Drain Current (Pulse) Note1
ID(DC)
ID(pulse)
±32
±100
Total Power Dissipation (TA = 25°C)
PT
1.2
Total Power Dissipation (TC = 25°C)
Single Avalanche Current Note2
Single Avalanche Energy Note2
PT 66
IAS 26 / 21 / 7
EAS 6.7 / 44 / 49
Channel Temperature
Tch 175
Storage Temperature
Tstg –55 to + 175
V
V
A
A
W
W
A
mJ
°C
°C
(TO-251)
(TO-252)
Notes 1. PW 10 µ s, Duty Cycle 1%
2. Starting Tch = 25°C, RG = 25 Ω, VGS = 20 0 V (See Figure 4.)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
2.27 °C/W
125 °C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14155EJ4V0DS00 (4th edition)
Date Published July 2005 NS CP(K)
Printed in Japan
The mark shows major revised points.
1999, 2005






NP32N055HHE Datasheet, Funktion
NP32N055HHE, NP32N055IHE, NP32N055SHE
PACKAGE DRAWINGS (Unit: mm)
1) TO-251 (JEITA) / MP-3
6.5±0.2
5.0±0.2
4
2.3±0.2
0.5±0.1
123
1.1±0.2
2.3 TYP.
0.5+−00..21
2.3 TYP.
0.5+−00..21
1. Gate
2. Drain
3. Source
4. Fin (Drain)
3) TO-252 (JEDEC) / MP-3ZK
6.5±0.2
5.1 TYP.
4.3 MIN.
4
2.3±0.1
0.5±0.1
No Plating
123
1.14 MAX.
2.3 2.3
No Plating
0.76±0.12
0 to 0.25
0.5±0.1
1. Gate
2. Drain
3. Source
4. Fin (Drain)
1.0
2) TO-252 (JEITA) / MP-3Z
6.5±0.2
5.0±0.2
4
2.3±0.2
0.5±0.1
123
1.1±0.2
2.3 TYP.
0.9 MAX. 0.8 MAX.
2.3 TYP.
0.8 TYP.
1. Gate
2. Drain
3. Source
4. Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
6 Data Sheet D14155EJ4V0DS

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