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NVB6411AN Schematic ( PDF Datasheet ) - ON Semiconductor

Teilenummer NVB6411AN
Beschreibung N-Channel Power MOSFET / Transistor
Hersteller ON Semiconductor
Logo ON Semiconductor Logo 




Gesamt 7 Seiten
NVB6411AN Datasheet, Funktion
NTB6411AN, NTP6411AN,
NVB6411AN
N-Channel Power MOSFET
100 V, 77 A, 14 mW
Features
Low RDS(on)
High Current Capability
100% Avalanche Tested
NVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
These Devices are PbFree and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified)
Parameter
Symbol Value
DraintoSource Voltage
GatetoSource Voltage Continuous
Continuous Drain
Current RqJC
Steady
State
TC = 25°C
TC = 100°C
Power Dissipation
RqJC
Steady TC = 25°C
State
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Range
VDSS
VGS
ID
PD
IDM
TJ, Tstg
100
$20
77
54
217
285
55 to
+175
Source Current (Body Diode)
Single Pulse DraintoSource Avalanche
Energy (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) =
56 A, L = 0.3 mH, RG = 25 W)
Lead Temperature for Soldering
Purposes, 1/8from Case for 10 Seconds
IS
EAS
TL
77
470
260
Unit
V
V
A
W
A
°C
A
mJ
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
JunctiontoCase (Drain) Steady State
RqJC
0.69 °C/W
JunctiontoAmbient (Note 1)
RqJA
33
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
© Semiconductor Components Industries, LLC, 2012
January, 2012 Rev. 2
1
http://onsemi.com
V(BR)DSS
100 V
RDS(ON) MAX
14 mW @ 10 V
ID MAX
(Note 1)
77 A
NChannel
D
G
S
4
12
3
TO220AB
CASE 221A
STYLE 5
4
12
3
D2PAK
CASE 418B
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
4
Drain
NTP
6411ANG
AYWW
1
Gate
3
Source
NTB
6411ANG
AYWW
1
Gate
2
Drain
3
Source
2
Drain
6411AN = Specific Device Code
G = PbFree Device
A = Assembly Location
Y = Year
WW = Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Publication Order Number:
NTB6411AN/D






NVB6411AN Datasheet, Funktion
NTB6411AN, NTP6411AN, NVB6411AN
PACKAGE DIMENSIONS
D2PAK 3
CASE 418B04
ISSUE K
C
E
B
V
W
4
123
S
T
SEATING
PLANE
G
K
D 3 PL
0.13 (0.005) M T B M
VARIABLE
CONFIGURATION
ZONE
R
L
MM
A
W
J
H
N
L
U
M
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B01 THRU 418B03 OBSOLETE,
NEW STANDARD 418B04.
INCHES
DIM MIN MAX
A 0.340 0.380
B 0.380 0.405
C 0.160 0.190
D 0.020 0.035
E 0.045 0.055
F 0.310 0.350
G 0.100 BSC
H 0.080 0.110
J 0.018 0.025
K 0.090 0.110
L 0.052 0.072
M 0.280 0.320
N 0.197 REF
P 0.079 REF
R 0.039 REF
S 0.575 0.625
V 0.045 0.055
MILLIMETERS
MIN MAX
8.64 9.65
9.65 10.29
4.06 4.83
0.51 0.89
1.14 1.40
7.87 8.89
2.54 BSC
2.03 2.79
0.46 0.64
2.29 2.79
1.32 1.83
7.11 8.13
5.00 REF
2.00 REF
0.99 REF
14.60 15.88
1.14 1.40
STYLE 2:
P
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
L
F
VIEW WW
1
FF
VIEW WW
2
VIEW WW
3
SOLDERING FOOTPRINT*
10.49
16.155
8.38
2X
1.016
2X
3.504
5.080
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
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