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Teilenummer | NVB6411AN |
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Beschreibung | N-Channel Power MOSFET / Transistor | |
Hersteller | ON Semiconductor | |
Logo | ||
Gesamt 7 Seiten NTB6411AN, NTP6411AN,
NVB6411AN
N-Channel Power MOSFET
100 V, 77 A, 14 mW
Features
• Low RDS(on)
• High Current Capability
• 100% Avalanche Tested
• NVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Continuous Drain
Current RqJC
Steady
State
TC = 25°C
TC = 100°C
Power Dissipation
RqJC
Steady TC = 25°C
State
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Range
VDSS
VGS
ID
PD
IDM
TJ, Tstg
100
$20
77
54
217
285
−55 to
+175
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) =
56 A, L = 0.3 mH, RG = 25 W)
Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
IS
EAS
TL
77
470
260
Unit
V
V
A
W
A
°C
A
mJ
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Case (Drain) Steady State
RqJC
0.69 °C/W
Junction−to−Ambient (Note 1)
RqJA
33
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
© Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 2
1
http://onsemi.com
V(BR)DSS
100 V
RDS(ON) MAX
14 mW @ 10 V
ID MAX
(Note 1)
77 A
N−Channel
D
G
S
4
12
3
TO−220AB
CASE 221A
STYLE 5
4
12
3
D2PAK
CASE 418B
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
4
Drain
NTP
6411ANG
AYWW
1
Gate
3
Source
NTB
6411ANG
AYWW
1
Gate
2
Drain
3
Source
2
Drain
6411AN = Specific Device Code
G = Pb−Free Device
A = Assembly Location
Y = Year
WW = Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Publication Order Number:
NTB6411AN/D
NTB6411AN, NTP6411AN, NVB6411AN
PACKAGE DIMENSIONS
D2PAK 3
CASE 418B−04
ISSUE K
C
E
−B−
V
W
4
123
S
−T−
SEATING
PLANE
G
K
D 3 PL
0.13 (0.005) M T B M
VARIABLE
CONFIGURATION
ZONE
R
L
MM
A
W
J
H
N
L
U
M
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
INCHES
DIM MIN MAX
A 0.340 0.380
B 0.380 0.405
C 0.160 0.190
D 0.020 0.035
E 0.045 0.055
F 0.310 0.350
G 0.100 BSC
H 0.080 0.110
J 0.018 0.025
K 0.090 0.110
L 0.052 0.072
M 0.280 0.320
N 0.197 REF
P 0.079 REF
R 0.039 REF
S 0.575 0.625
V 0.045 0.055
MILLIMETERS
MIN MAX
8.64 9.65
9.65 10.29
4.06 4.83
0.51 0.89
1.14 1.40
7.87 8.89
2.54 BSC
2.03 2.79
0.46 0.64
2.29 2.79
1.32 1.83
7.11 8.13
5.00 REF
2.00 REF
0.99 REF
14.60 15.88
1.14 1.40
STYLE 2:
P
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
L
F
VIEW W−W
1
FF
VIEW W−W
2
VIEW W−W
3
SOLDERING FOOTPRINT*
10.49
16.155
8.38
2X
1.016
2X
3.504
5.080
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
6
6 Page | ||
Seiten | Gesamt 7 Seiten | |
PDF Download | [ NVB6411AN Schematic.PDF ] |
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