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PDF NVD5865NL Data sheet ( Hoja de datos )
| Número de pieza | NVD5865NL | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NVD5865NL
Power MOSFET
60 V, 46 A, 16 mW, Single N−Channel
Features
• Low RDS(on) to Minimize Conduction Losses
• High Current Capability
• Avalanche Energy Specified
• AEC−Q101 Qualified
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Cur-
rent RqJC (Notes 1 & 3)
Power Dissipation
(Note 1)
RqJC
Continuous Drain Cur-
rent
3)
RqJA
(Notes
1,
2
&
Power
(Notes
Dissipation
1 & 2)
RqJA
Pulsed Drain Current
Current Limited by
Package (Note 3)
Steady
State
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
TA = 25°C
Steady TA = 100°C
State TA = 25°C
TA = 100°C
TA = 25°C, tp = 10 ms
TA = 25°C
VDSS
VGS
ID
PD
ID
PD
IDM
IDmaxpkg
60
"20
46
33
71
36
10
7.0
3.1
1.5
203
60
V
V
A
W
A
W
A
A
Operating Junction and Storage Temperature
TJ, Tstg
−55 to
175
°C
Source Current (Body Diode)
IS 46 A
Single Pulse Drain−to−Source Avalanche
Energy (L = 0.1 mH)
EAS 36 mJ
IAS 27 A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Case (Drain) (Note 1)
RqJC
2.1 °C/W
Junction−to−Ambient − Steady State (Note 2)
RqJA
49
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
http://onsemi.com
V(BR)DSS
60 V
RDS(on)
16 mW @ 10 V
19 mW @ 4.5 V
D
ID
46 A
G
S
N−CHANNEL MOSFET
4
12
3
DPAK
CASE 369AA
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
2
1 Drain 3
Gate Source
Y = Year
WW = Work Week
V5865L = Device Code
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
January, 2013 − Rev. 2
1
Publication Order Number:
NVD5865NL/D
1 page  
NVD5865NL
TYPICAL CHARACTERISTICS
10
Duty Cycle = 0.5
1 0.2
0.1
0.05
0.1 0.02
0.01
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10 100 1000
t, PULSE TIME (s)
Figure 12. Thermal Response
ORDERING INFORMATION
Order Number
Package
Shipping†
NVD5865NLT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NVD5865NL.PDF ] | |
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