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Teilenummer | FSB649 |
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Beschreibung | NPN Low Saturation Transistor | |
Hersteller | Fairchild Semiconductor | |
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Gesamt 3 Seiten FSB649
C
E
B
SuperSOTTM-3
NPN Low Saturation Transistor
These devices are designed with high current gain and low saturation voltage with collector currents up to 3A
continuous. Sourced from Process NC.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
FSB649
VCEO
Collector-Emitter Voltage
25
VCBO
VEBO
Collector-Base Voltage
Emitter-Base Voltage
35
5
IC
TJ, Tstg
Collector Current - Continuous
Operating and Storage Junction Temperature Range
3
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Units
V
V
V
A
°C
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD
RθJA
Total Device Dissipation
Thermal Resistance, Junction to Ambient
Max
FSB649
500
250
Units
mW
°C/W
© 1999 Fairchild Semiconductor Corporation
fsb649.lwpPrNC revA
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Seiten | Gesamt 3 Seiten | |
PDF Download | [ FSB649 Schematic.PDF ] |
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