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PDF N0413N Data sheet ( Hoja de datos )
| Número de pieza | N0413N | |
| Descripción | N-CHANNEL MOSFET FOR SWITCHING | |
| Fabricantes | Renesas | |
| Logotipo |  |
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N0413N
N-CHANNEL MOSFET FOR SWITCHING
Preliminary Data Sheet
R07DS0555EJ0100
Rev.1.00
Nov 07, 2011
Description
The N0413N is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Low on-state resistance
RDS (on) = 3.3 mΩ MAX. (VGS = 10 V, ID = 50 A)
• Low input capacitance
Ciss = 5550 pF TYP. (VDS = 25 V, VGS = 0 V)
• High current
ID(DC) = ±100 A
• RoHS Compliant
Ordering Information
Part No.
N0413N-ZK-E1-AY ∗1
Lead Plating
Pure Sn (Tin)
Tape
Packing
N0413N-ZK-E2-AY ∗1
800 p/reel
Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.)
Package
TO-263
1.39 g TYP.
Absolute Maximum Ratings (TA = 25°C, all terminals are connected)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain Current (pulse) ∗1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current ∗2
Single Avalanche Energy ∗2
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAS
EAS
Ratings
40
±20
±100
±400
119
1.5
150
−55 to +150
55
300
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case (Drain) Thermal Resistance Rth(ch-C)
Channel to Ambient Thermal Resistance ∗2
Rth(ch-A)
1.05
83.3
°C/W
°C/W
Notes: ∗1. PW ≤ 10 μs, Duty Cycle ≤ 1%
∗2. Starting Tch = 25°C, RG = 25 Ω, VDD = 25 V, VGS = 20 → 0 V, L = 100 μH
R07DS0555EJ0100 Rev.1.00
Nov 07, 2011
Page 1 of 6
1 page  
N0413N
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. CHANNEL TEMPERATURE
5
4
3
2
1
0
-50
VGS = 10 V
ID = 50 A
Pulsed
0 50 100 150
Tch - Channel Temperature - °C
1000
100
SWITCHING CHARACTERISTICS
tf
td(off)
td(on)
10 tr
1
0.1
1
VDD = 20 V
VGS = 10 V
RG = 0 Ω
10 100
ID - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100
VGS = 10 V
10
0V
1
0.1
0.01
0
Pulsed
0.4 0.8 1.2 1.6
VF(S-D) - Source to Drain Voltage - V
Chapter Title
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
1000
Ciss
Coss
100
VGS = 0 V
f = 1.0 MHz
10
0.1 1
Crss
10 100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT CHARACTERISTICS
14
12
10
VDD = 8 V
20 V
8 32 V
6
4
2 ID = 100 A
0
0 20 40 60 80 100 120
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
1
0.1
0.1
VGS = 0 V
di/dt = 100 A/µs
1 10
IF - Diode Forward Current - A
100
R07DS0555EJ0100 Rev.1.00
Nov 07, 2011
Page 5 of 6
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet N0413N.PDF ] | |
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