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Teilenummer | NVB5860N |
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Beschreibung | N-Channel Power MOSFET / Transistor | |
Hersteller | ON Semiconductor | |
Logo | ||
Gesamt 7 Seiten NTB5860N, NTP5860N,
NVB5860N
N-Channel Power MOSFET
60 V, 220 A, 3.0 mW
Features
• Low RDS(on)
• High Current Capability
• 100% Avalanche Tested
• These Devices are Pb−Free, Halogen Free and are RoHS Compliant
• NVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Continuous Drain
Current, RqJC
Steady
State
TC = 25°C
TC = 100°C
Power Dissipation,
RqJC
Steady
State
TC = 25°C
Pulsed Drain Current
tp = 10 ms
Current Limited by Package
Operating and Storage Temperature Range
VDSS
VGS
ID
PD
IDM
IDMmax
TJ, Tstg
60
$20
220
156
283
660
130
−55 to
+175
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (L = 0.3 mH)
IS 130
EAS 735
Lead Temperature for Soldering
Purposes (1/8″ from Case for 10 Seconds)
TL 260
Unit
V
V
A
W
A
A
°C
A
mJ
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Case (Drain) Steady State
RqJC
0.53 °C/W
Junction−to−Ambient − Steady State (Note 1)
RqJA
28
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
© Semiconductor Components Industries, LLC, 2012
September, 2012 − Rev. 2
1
http://onsemi.com
V(BR)DSS
60 V
RDS(on) MAX
3.0 mW @ 10 V
ID MAX
220 A
D
G
S
N−CHANNEL MOSFET
4
4
12
3
12
3
TO−220AB
CASE 221A
STYLE 5
D2PAK
CASE 418B
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
NTP
5860NG
AYWW
1
Gate
3
Source
NTB
5860NG
AYWW
1
Gate
2
Drain
3
Source
2
Drain
G = Pb−Free Device
A = Assembly Location*
Y = Year
WW = Work Week
*Could be one or two digit alpha or numeric code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Publication Order Number:
NTB5860N/D
NTB5860N, NTP5860N, NVB5860N
PACKAGE DIMENSIONS
D2PAK
CASE 418B−04
ISSUE J
−B−
4
C
E
V
W
123
S
A
−T−
SEATING
PLANE
G
VARIABLE
CONFIGURATION
ZONE
L
M
K
D 3 PL
0.13 (0.005) M T B M
H
W
J
R
N
U
L
MM
P
L
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
INCHES
DIM MIN MAX
A 0.340 0.380
B 0.380 0.405
C 0.160 0.190
D 0.020 0.035
E 0.045 0.055
F 0.310 0.350
G 0.100 BSC
H 0.080 0.110
J 0.018 0.025
K 0.090 0.110
L 0.052 0.072
M 0.280 0.320
N 0.197 REF
P 0.079 REF
R 0.039 REF
S 0.575 0.625
V 0.045 0.055
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
MILLIMETERS
MIN MAX
8.64 9.65
9.65 10.29
4.06 4.83
0.51 0.89
1.14 1.40
7.87 8.89
2.54 BSC
2.03 2.79
0.46 0.64
2.29 2.79
1.32 1.83
7.11 8.13
5.00 REF
2.00 REF
0.99 REF
14.60 15.88
1.14 1.40
F
VIEW W−W
1
FF
VIEW W−W
2
VIEW W−W
3
SOLDERING FOOTPRINT*
8.38
0.33
10.66
0.42
1.016
0.04
5.08
0.20
17.02
0.67
3.05
0.12
ǒ ǓSCALE 3:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
6
6 Page | ||
Seiten | Gesamt 7 Seiten | |
PDF Download | [ NVB5860N Schematic.PDF ] |
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