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NVB5860N Schematic ( PDF Datasheet ) - ON Semiconductor

Teilenummer NVB5860N
Beschreibung N-Channel Power MOSFET / Transistor
Hersteller ON Semiconductor
Logo ON Semiconductor Logo 




Gesamt 7 Seiten
NVB5860N Datasheet, Funktion
NTB5860N, NTP5860N,
NVB5860N
N-Channel Power MOSFET
60 V, 220 A, 3.0 mW
Features
Low RDS(on)
High Current Capability
100% Avalanche Tested
These Devices are PbFree, Halogen Free and are RoHS Compliant
NVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified)
Parameter
Symbol Value
DraintoSource Voltage
GatetoSource Voltage Continuous
Continuous Drain
Current, RqJC
Steady
State
TC = 25°C
TC = 100°C
Power Dissipation,
RqJC
Steady
State
TC = 25°C
Pulsed Drain Current
tp = 10 ms
Current Limited by Package
Operating and Storage Temperature Range
VDSS
VGS
ID
PD
IDM
IDMmax
TJ, Tstg
60
$20
220
156
283
660
130
55 to
+175
Source Current (Body Diode)
Single Pulse DraintoSource Avalanche
Energy (L = 0.3 mH)
IS 130
EAS 735
Lead Temperature for Soldering
Purposes (1/8from Case for 10 Seconds)
TL 260
Unit
V
V
A
W
A
A
°C
A
mJ
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
JunctiontoCase (Drain) Steady State
RqJC
0.53 °C/W
JunctiontoAmbient Steady State (Note 1)
RqJA
28
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
© Semiconductor Components Industries, LLC, 2012
September, 2012 Rev. 2
1
http://onsemi.com
V(BR)DSS
60 V
RDS(on) MAX
3.0 mW @ 10 V
ID MAX
220 A
D
G
S
NCHANNEL MOSFET
4
4
12
3
12
3
TO220AB
CASE 221A
STYLE 5
D2PAK
CASE 418B
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
NTP
5860NG
AYWW
1
Gate
3
Source
NTB
5860NG
AYWW
1
Gate
2
Drain
3
Source
2
Drain
G = PbFree Device
A = Assembly Location*
Y = Year
WW = Work Week
*Could be one or two digit alpha or numeric code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Publication Order Number:
NTB5860N/D






NVB5860N Datasheet, Funktion
NTB5860N, NTP5860N, NVB5860N
PACKAGE DIMENSIONS
D2PAK
CASE 418B04
ISSUE J
B
4
C
E
V
W
123
S
A
T
SEATING
PLANE
G
VARIABLE
CONFIGURATION
ZONE
L
M
K
D 3 PL
0.13 (0.005) M T B M
H
W
J
R
N
U
L
MM
P
L
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B01 THRU 418B03 OBSOLETE,
NEW STANDARD 418B04.
INCHES
DIM MIN MAX
A 0.340 0.380
B 0.380 0.405
C 0.160 0.190
D 0.020 0.035
E 0.045 0.055
F 0.310 0.350
G 0.100 BSC
H 0.080 0.110
J 0.018 0.025
K 0.090 0.110
L 0.052 0.072
M 0.280 0.320
N 0.197 REF
P 0.079 REF
R 0.039 REF
S 0.575 0.625
V 0.045 0.055
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
MILLIMETERS
MIN MAX
8.64 9.65
9.65 10.29
4.06 4.83
0.51 0.89
1.14 1.40
7.87 8.89
2.54 BSC
2.03 2.79
0.46 0.64
2.29 2.79
1.32 1.83
7.11 8.13
5.00 REF
2.00 REF
0.99 REF
14.60 15.88
1.14 1.40
F
VIEW WW
1
FF
VIEW WW
2
VIEW WW
3
SOLDERING FOOTPRINT*
8.38
0.33
10.66
0.42
1.016
0.04
5.08
0.20
17.02
0.67
3.05
0.12
ǒ ǓSCALE 3:1
mm
inches
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
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