|
|
PDF NVD14N03R Data sheet ( Hoja de datos )
| Número de pieza | NVD14N03R | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de NVD14N03R (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
NTD14N03R, NVD14N03R
Power MOSFET
14 A, 25 V, N−Channel DPAK
Features
• Planar HD3e Process for Fast Switching Performance
• Low RDS(on) to Minimize Conduction Loss
• Low Ciss to Minimize Driver Loss
• Low Gate Charge
• Optimized for High Side Switching Requirements in
High−Efficiency DC−DC Converters
• NVD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Thermal Resistance − Junction−to−Case
Total Power Dissipation @ TA = 25°C
Drain Current − Continuous @ TA = 25°C, Chip
− Continuous @ TA = 25°C, Limited by Package
− Single Pulse (tp ≤ 10 ms)
Thermal Resistance, Junction−to−Ambient
(Note 1)
Total Power Dissipation @ TA = 25°C
Drain Current − Continuous @ TA = 25°C
Thermal Resistance, Junction−to−Ambient
(Note 2)
Total Power Dissipation @ TA = 25°C
Drain Current − Continuous @ TA = 25°C
Operating and Storage Temperature Range
VDSS
VGS
RqJC
PD
ID
ID
ID
RqJA
PD
ID
RqJA
PD
ID
TJ, Tstg
25 Vdc
±20 Vdc
6.0 °C/W
20.8 W
14 A
11.4 A
28 A
80 °C/W
1.56 W
3.1 A
120 °C/W
1.04
2.5
−55 to
150
W
A
°C
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. When surface mounted to an FR4 board using 0.5 sq. in pad size.
2. When surface mounted to an FR4 board using minimum recommended pad
size.
http://onsemi.com
14 AMPERES, 25 VOLTS
RDS(on) = 70.4 mW (Typ)
D
N−CHANNEL
G
S
4
12
3
DPAK
CASE 369C
(Surface Mount)
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENTS
4 Drain
13
Gate 2 Source
Drain
A
Y
WW
14N03
G
= Assembly Location*
= Year
= Work Week
= Device Code
= Pb−Free Package
* The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly
code may be blank.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 8
1
Publication Order Number:
NTD14N03R/D
1 page  
NTD14N03R, NVD14N03R
TYPICAL CHARACTERISTICS
1000
100 D = 0.5
0.2
10 0.1
0.05
0.02
1 0.01
0.1
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
t, TIME (s)
Figure 12. Thermal Response
1
10 100 1000
ORDERING INFORMATION
Device
Package
Shipping†
NTD14N03RT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
NVD14N03RT4G*
DPAK
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
http://onsemi.com
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NVD14N03R.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| NVD14N03R | Power MOSFET ( Transistor ) | ON Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |