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FDD3672_F085 Schematic ( PDF Datasheet ) - Fairchild Semiconductor

Teilenummer FDD3672_F085
Beschreibung N-Channel UltraFET Trench MOSFET
Hersteller Fairchild Semiconductor
Logo Fairchild Semiconductor Logo 




Gesamt 6 Seiten
FDD3672_F085 Datasheet, Funktion
March 2011
FDD3672_F085
N-Channel UltraFET Trench MOSFET
100V, 44A, 28mΩ
Features
„ Typ rDS(on) = 24mΩ at VGS = 10V, ID = 44A
„ Typ Qg(10) = 24nC at VGS = 10V
„ Low Miller Charge
„ Low Qrr Body Diode
„ Optimized efficiency at high frequencies
„ UIS Capability (Single Pulse and Repetitive Pulse)
„ Qualified to AEC Q101
„ RoHS Compliant
Applications
„ DC/DC converters and Off-Line UPS
„ Distributed Power Architectures and VRMs
„ Primary Switch for 24V and 48V Systems
„ High Voltage Synchronous Rectifier
FDD3672_F085 Rev. C
1
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FDD3672_F085 Datasheet, Funktion
Typical Characteristics
1.4
VGS = VDS
ID = 250μA
1.2
1.0
0.8
0.6
0.4
-80
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE(oC)
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
1.15
1.10
ID = 5mA
1.05
1.00
0.95
0.90
0.85
-80
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10000
1000
Ciss
Coss
100
f = 1MHz
VGS = 0V
Crss
10
0.1
1 10 80
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 13. Capacitance vs Drain to Source
Voltage
10
ID = 44A
8
6
VDD = 50V
VDD = 40V
VDD = 60V
4
2
0
0 5 10 15 20 25
Qg, GATE CHARGE(nC)
Figure 14. Gate Charge vs Gate to Source Voltage
FDD3672_F085 Rev. C
6
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