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PDF FDS6673BZ_F085 Data sheet ( Hoja de datos )
| Número de pieza | FDS6673BZ_F085 | |
| Descripción | P-Channel PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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PFD-CSh6a6n7n3eBlZP_oFw08e5rTrench® MOSFET
-30V, -14.5A, 7.8mΩ
July 2009
General Description
This P-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench process that
has been especially tailored to minimize the on-state
resistance.
This device is well suited for Power Management and
load switching applications common in Notebook
Computers and Portable Battery Packs.
Features
Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A
Max rDS(on) = 12mΩ, VGS = -4.5V, ID = -12A
Extended VGS range (-25V) for battery applications
HBM ESD protection level of 6.5kV typical (note 3)
High performance trench technology for extremely low
rDS(on)
High power and current handling capability
RoHS compliant
Qualified to AEC Q101
DD
D
D
SO-8
S SSG
5
6
7
8
4
3
2
1
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDS Drain to Source Voltage
VGS Gate to Source Voltage
ID
Drain Current -Continuous
-Pulsed
(Note1a)
Power Dissipation for Single Operation
(Note1a)
PD (Note1b)
(Note1c)
TJ, TSTG
Operating and Storage Temperature
Ratings
-30
±25
-14.5
-75
2.5
1.2
1.0
-55 to 150
Units
V
V
A
A
W
°C
Thermal Characteristics
RθJA
RθJC
Thermal Resistance , Junction to Ambient (Note 1a)
Thermal Resistance , Junction to Case (Note 1)
50 °C/W
25 °C/W
Package Marking and Ordering Information
Device Marking
FDS6673BZ
Device
FDS6673BZ _F085
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
©2009 Fairchild Semiconductor Corporation
FDS6673BZ_F085 Rev. A
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25 °C unless otherwise noted
104
VGS = -10V
103
102
10
1
0.5
10-4
SINGLE PULSE
RθJA = 125oC/W
TA = 25oC
10-3
10-2
10-1
1
t, PULSE WIDTH (sec)
10 102
Figure 13. Junction-to-Case Transient Thermal Response Curve
2
1
0.1
0.01
1E-3
1E-4
10-4
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA = 125oC/W
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-3
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (sec)
102
Figure 14. Junction-to-Ambient Transient Thermal Response Curve
103
103
FDS6673BZ_F085 Rev. A
5
www.fairchildsemi.com
5 Page | ||
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