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L8050QLT1G Schematic ( PDF Datasheet ) - Leshan Radio Company

Teilenummer L8050QLT1G
Beschreibung General Purpose Transistors
Hersteller Leshan Radio Company
Logo Leshan Radio Company Logo 




Gesamt 3 Seiten
L8050QLT1G Datasheet, Funktion
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
FEATURE
ƽHigh current capacity in compact package.
IC = 0.8A.
ƽEpitaxial planar type.
ƽPNP complement: L8550
ƽPb-Free Package is available.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
L8050PLT1
80P
3000/Tape&Reel
L8050PLT1G
80P
(Pb-Free)
3000/Tape&Reel
L8050QLT1
1YC
3000/Tape&Reel
L8050QLT1G
1YC
(Pb-Free)
3000/Tape&Reel
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-continuoun
Symbol
VCEO
VCBO
VEBO
IC
Max
25
40
5
800
Unit
V
V
V
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,(1)
TA=25°C
Derate above 25°C
Thermal Resistance,Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA=25°C
Derate above 25°C
Symbol
PD
R θJ A
PD
Max
Unit
225 mW
1.8 mW/°C
556 °C/W
300 mW
2.4 mW/°C
Thermal Resistance,Junction to Ambient
Junction and Storage Temperature
R θJ A
Tj,T Stg
417
-55 to +150
°C/W
°C
L8050*LT1
3
1
2
SOT–23
COLLECTOR
3
1
BASE
2
EMITTER
L8050*LT1–1/3





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