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PDF L8550PLT1G Data sheet ( Hoja de datos )
| Número de pieza | L8550PLT1G | |
| Descripción | General Purpose Transistors | |
| Fabricantes | Leshan Radio Company | |
| Logotipo |  |
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LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
FEATURE
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
L8550PLT1G
s-L8550PLT1G
85P
3000/Tape&Reel
L8550PLT3G
s-L8550PLT3G
85P
10000/Tape&Reel
L8550QLT1G
s-L8550QLT1G
1YD
3000/Tape&Reel
L8550QLT3G
L8550RLT1G
s-L8550QLT3G
s-L8550RLT1G
1YD
1YF
10000/Tape&Reel
3000/Tape&Reel
L8550RLT3G
s-L8550RLT3G
1YF
10000/Tape&Reel
L8550SLT1G
s-L8550SLT1G
1YH
3000/Tape&Reel
L8550SLT3G
s-L8550SLT3G
1YH
10000/Tape&Reel
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base voltage
Emitter-base Voltage
Collector current-continuoun
Symbol
V CEO
V CBO
V EBO
IC
Value
-25
-40
-5
-800
Unit
V
V
V
mAdc
THERMALCHARACTERISTICS
Characteristic
Total Device Dissipation FR- 5 Board (1)
T A = 25 °C
Derate above 25 °C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T A = 25 °C
Derate above 25 °C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol Max
Unit
PD
225 mW
1.8 mW /°C
R θJA
556 °C/W
PD
300 mW
2.4 mW /°C
R θJA
417 °C/W
T J , T stg -55 to +150 °C
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
L8550PLT1G
Series
S-L8550PLT1G
Series
3
1
2
SOT– 23
COLLECTOR
3
1
BASE
2
EMITTER
Rev.O 1/4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet L8550PLT1G.PDF ] | |
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