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L8550HRLT1G Schematic ( PDF Datasheet ) - Leshan Radio Company

Teilenummer L8550HRLT1G
Beschreibung General Purpose Transistors
Hersteller Leshan Radio Company
Logo Leshan Radio Company Logo 




Gesamt 3 Seiten
L8550HRLT1G Datasheet, Funktion
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
FEATURE
ƽHigh current capacity in compact package.
ƽEpitaxial planar type.
ƽPNP complement: L8550H
ƽWe declare that the material of product compliance with RoHS requirements.
ƽS- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
L8550HPLT1G
s-L8550HPLT1G
1HB
3000/Tape&Reel
L8550HPLT3G
L8550HQLT1G
s-L8550HPLT3G
s-L8550HQLT1G
1HB
1HD
10000/Tape&Reel
3000/Tape&Reel
L8550HQLT3G
L8550HRLT1G
s-L8550HQLT3G
s-L8550HRLT1G
1HD
1HF
10000/Tape&Reel
3000/Tape&Reel
L8550HRLT3G
L8550HSLT1G
s-L8550HRLT3G
s-L8550HSLT1G
1HF
1HH
10000/Tape&Reel
3000/Tape&Reel
L8550HSLT3G
s-L8550HSLT3G 1HH
10000/Tape&Reel
L8550HPLT1G
Series
S-L8550HPLT1G
Series
3
1
2
SOT–23
COLLECTOR
3
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Symbol
VCEO
VCBO
VEBO
IC
Max
-25
-40
-5
-1500
Unit
V
V
V
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,(1)
TA=25°C
Derate above 25°C
Thermal Resistance,Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA=25°C
Derate above 25°C
Symbol
PD
R θJ A
PD
Max
Unit
225 mW
1.8 mW/°C
556 °C/W
300 mW
2.4 mW/°C
Thermal Resistance,Junction to Ambient
Junction and Storage Temperature
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
R θJ A
T j,T St g
417
-55 to +150
°C/W
°C
Rev.A 1/3





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