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Teilenummer | L8050HSLT1G |
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Beschreibung | General Purpose Transistors | |
Hersteller | Leshan Radio Company | |
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Gesamt 3 Seiten LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
FEATURE
ƽHigh current capacity in compact package.
IC =1.5 A.
ƽEpitaxial planar type.
ƽNPN complement: L8050H
ƽPb-Free Package is available.
ƽS- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
L8050HPLT1G
S-L8050HPLT1G 1HA
3000/Tape&Reel
L8050HPLT3G
S-L8050HPLT3G 1HA
10000/Tape&Reel
L8050HQLT1G
S-L8050HQLT1G 1HC
3000/Tape&Reel
L8050HQLT3G
S-L8050HQLT3G 1HC
10000/Tape&Reel
L8050HRLT1G
L8050HRLT3G
L8050HSLT1G
L8050HSLT3G
S-L8050HRLT1G
S-L8050HRLT3G
S-L8050HSLT1G
S-L8050HSLT3G
1HE
1HE
1HG
1HG
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,(1)
TA=25°C
Derate above 25°C
Thermal Resistance,Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA=25°C
Derate above 25°C
Thermal Resistance,Junction to Ambient
Junction and Storage Temperature
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Symbol
VCEO
VCBO
VEBO
IC
Max
25
40
5
1500
Unit
V
V
V
mAdc
Symbol
PD
R θJ A
PD
R θJ A
T j,T St g
Max
Unit
225 mW
1.8 mW/°C
556 °C/W
300 mW
2.4 mW/°C
417
-55 to +150
°C/W
°C
L8050HQLTIG
Series
S-L8050HQLTIG
Series
3
1
2
SOT–23
COLLECTOR
3
1
BASE
2
EMITTER
Rev.A 1/3
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Seiten | Gesamt 3 Seiten | |
PDF Download | [ L8050HSLT1G Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
L8050HSLT1G | General Purpose Transistors | Leshan Radio Company |
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