|
|
PDF LMBT5550LT1G Data sheet ( Hoja de datos )
| Número de pieza | LMBT5550LT1G | |
| Descripción | High Voltage Transistors | |
| Fabricantes | Leshan Radio Company | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de LMBT5550LT1G (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
|
No Preview Available !
LESHAN RADIO COMPANY, LTD.
High Voltage Transistors
FEATURE
ƽ We declare that the material of product
compliance with RoHS requirements.
ƽ S- Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC-Q101 Qualified and
PPAP Capable.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LMBT5550LT1G
S-LMBT5550LT1G
LMBT5550LT3G
S-LMBT5550LT3G
LMBT5551LT1G
S-LMBT5551LT1G
LMBT5551LT3G
S-LMBT5551LT3G
M1F
M1F
G1
G1
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
MAXIMUM RATINGS
Rating
Collectorā-āEmitter Voltage
Symbol
MMBT5550
MMBT5551
VCEO
Collectorā-āBase Voltage
MMBT5550
MMBT5551
VCBO
Emitterā-āBase Voltage
Collector Current - Continuous
VEBO
IC
Value
140
160
160
180
6.0
600
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR-ā5 Board
(Note 1) @TA = 25°C
Derate Above 25°C
PD
225 mW
1.8 mW/°C
Thermal Resistance, Junction-to-Ambient
Total Device Dissipation Alumina
Substrate (Note 2) @TA = 25°C
Derate Above 25°C
RqJA
PD
556 °C/W
300 mW
2.4 mW/°C
Thermal Resistance, Junction-to-Ambient
Junction and Storage Temperature
RqJA
417
TJ, Tstg -ā55 to +150
°C/W
°C
LMBT5550LT1G
LMBT5551LT1G
S-LMBT5550LT1G
S-LMBT5551LT1G
3
1
2
SOT–23
1
BASE
3
COLLECTOR
2
EMITTER
Rev.O 1/5
1 page  
A
L
3
BS
12
VG
C
D
H
K
0.037
0.95
LESHAN RADIO COMPANY, LTD.
LMBT5550LT1G LMBT5551LT1G
S-LMBT5550LT1G S-LMBT5551LT1G
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM
INCHES
MILLIMETERS
MIN MAX MIN MAX
A 0.1102 0.1197 2.80 3.04
B 0.0472 0.0551 1.20 1.40
C 0.0350 0.0440 0.89 1.11
D 0.0150 0.0200 0.37 0.50
G 0.0701 0.0807 1.78 2.04
H 0.0005 0.0040 0.013 0.100
J 0.0034 0.0070 0.085 0.177
J K 0.0140 0.0285 0.35 0.69
L 0.0350 0.0401 0.89 1.02
S 0.0830 0.1039 2.10 2.64
V 0.0177 0.0236 0.45 0.60
PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.037
0.95
0.035
0.9
0.079
2.0
0.031
0.8
inches
mm
Rev.O 5/5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet LMBT5550LT1G.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| LMBT5550LT1 | (LMBT5550LT1 / LMBT5551LT1) Transistors | Leshan Radio Company |
| LMBT5550LT1G | High Voltage Transistors | Leshan Radio Company |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |