NP32N055IDE Datasheet PDF - NEC
| Part Number | NP32N055IDE | |
| Description | MOS FIELD EFFECT TRANSISTOR | |
| Manufacturers | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP32N055HDE, NP32N055IDE, NP32N055SDE
SWITCHING
N-CHANNEL POWER MOSFET
DESCRIPTION
These products are N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Channel temperature 175 degree rated
• Super low on-state resistance
RDS(on)1 = 24 mΩ MAX. (VGS = 10 V, ID = 16 A)
RDS(on)2 = 29 mΩ MAX. (VGS = 5.0 V, ID = 16 A)
• Low Ciss : Ciss = 1300 pF TYP.
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP32N055HDE
NP32N055IDE Note
TO-251 (JEITA) / MP-3
TO-252 (JEITA) / MP-3Z
NP32N055SDE
Note Not for new design.
TO-252 (JEDEC) / MP-3ZK
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
55
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
ID(DC)
±32
Drain Current (pulse) Note1
ID(pulse)
±100
Total Power Dissipation (TC = 25°C)
PT1
66
Total Power Dissipation (TA = 25°C)
PT2
1.2
Channel Temperature
Tch 175
Storage Temperature
Tstg –55 to +175
Single Avalanche Current Note2
IAS 28 / 21 / 8
Single Avalanche Energy Note2
EAS 7.8 / 44 / 64
V
V
A
A
W
W
°C
°C
A
mJ
(TO-251)
(TO-252)
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, RG = 25 Ω , VGS = 20 → 0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
2.27 °C/W
125 °C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D15309EJ2V0DS00 (2nd edition)
Date Published July 2005 NS CP(K)
Printed in Japan
The mark shows major revised points.
2001, 2005
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NP32N055HDE, NP32N055IDE, NP32N055SDE
Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
60
50
VGS = 4.5 V
40 5.0 V
10 V
30
20
10
ID = 16 A
0
−50 0 50 100 150
Tch - Channel Temperature - ˚C
Figure14. CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
10000
VGS = 0 V
f = 1 MHz
1000
Ciss
Coss
100 Crss
Figure13. SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
Pulsed
100
VGS = 10 V
10
VGS = 0 V
1
0.1
0
0.5 1.0
VSD - Source to Drain Voltage - V
1.5
Figure15. SWITCHING CHARACTERISTICS
1000
100 tf
10 tr
td(off)
td(on)
10
0.1
1 10
VDS - Drain to Source Voltage - V
100
1000
Figure16. REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/µs
VGS = 0 V
100
10
1
0.1 1.0 10 100
IF - Drain Current - A
1
0.1 1
10 100
ID - Drain Current - A
Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
80 16
14
60 VGS 12
VDD = 44 V
28 V
11 V
40
10
8
6
20 4
VDS
2
ID = 32 A
0
0 4 8 12 16 20 24 28 32
QG - Gate Charge - nC
Data Sheet D15309EJ2V0DS
5
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