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NP23N06YDG Schematic ( PDF Datasheet ) - Renesas

Teilenummer NP23N06YDG
Beschreibung MOS FIELD EFFECT TRANSISTOR
Hersteller Renesas
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Gesamt 8 Seiten
NP23N06YDG Datasheet, Funktion
NP23N06YDG
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0014EJ0100
Rev.1.00
Jul 01, 2010
Description
The NP23N06YDG is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
Low on-state resistance
RDS(on) = 27 mΩ MAX. (VGS = 10 V, ID = 11.5 A)
Low Ciss: Ciss = 1200 pF TYP. (VDS = 25 V, VGS = 0 V)
Logic level drive type
Designed for automotive application and AEC-Q101 qualified
Small size package 8-pin HSON
Ordering Information
Part No.
NP23N06YDG -E1-AY 1
NP23N06YDG -E2-AY 1
LEAD PLATING
Pure Sn (Tin)
PACKING
Tape 2500 p/reel
Note: 1. Pb-free (This product does not contain Pb in the external electrode.)
Package
8-pin HSON, Taping (E1 type)
8-pin HSON, Taping (E2 type)
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) 1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C) 2
Channel Temperature
Storage Temperature
Repetitive Avalanche Current 3
Repetitive Avalanche Energy 3
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAR
EAR
Ratings
60
±20
±23
±46
60
1.0
175
55 to +175
11
12
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Rth(ch-C) 2.5 °C/W
Channel to Ambient Thermal Resistance 2
Rth(ch-A)
150
°C/W
Notes: 1. TC = 25°C, PW 10 μs, Duty Cycle 1%
2. Mounted on glass epoxy substrate of 40 mm x 40 mm x 0.8 mmt
*3. Tch(peak) 150°C, RG = 25 Ω
R07DS0014EJ0100 Rev.1.00
Jul 01, 2010
Page 1 of 6






NP23N06YDG Datasheet, Funktion
NP23N06YDG
Package Drawings (Unit: mm)
8-pin HSON (Mass: 0.13 g TYP.)
1
2
3
4
8
7
6
5
6.0 ±0.2
5.4 ±0.2
0.10 S
Chapter Title
Equivalent Circuit
0.73
0.4
1, 2, 3 : Source
4 : Gate
5, 6, 7, 8: Drain
3.18 ±0.2
0.6 ±0.15
0.8 ±0.15
Gate
Drain
Body
Diode
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static
electricity as much as possible, and quickly dissipate it once, when it has occurred.
R07DS0014EJ0100 Rev.1.00
Jul 01, 2010
Page 6 of 6

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