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NP20P04SLG Schematic ( PDF Datasheet ) - Renesas

Teilenummer NP20P04SLG
Beschreibung MOS FIELD EFFECT TRANSISTOR
Hersteller Renesas
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Gesamt 6 Seiten
NP20P04SLG Datasheet, Funktion
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP20P04SLG
SWITCHING
P-CHANNEL POWER MOSFET
DESCRIPTION
The NP20P04SLG is P-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
NP20P04SLG-E1-AY Note
NP20P04SLG-E2-AY Note
LEAD PLATING
Pure Sn (Tin)
PACKING
Tape 2500 p/reel
Note Pb-free (This product does not contain Pb in external electrode.)
PACKAGE
TO-252 (MP-3ZK)
FEATURES
Super low on-state resistance
RDS(on)1 = 25 mΩ MAX. (VGS = 10 V, ID = 10 A)
RDS(on)2 = 38 mΩ MAX. (VGS = 4.5 V, ID = 10 A)
Low input capacitance
Ciss = 1650 pF TYP.
Built-in gate protection diode
(TO-252)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
IAS
EAS
40
m20
m20
m60
38
1.2
175
55 to +175
20
40
Notes 1. PW 10 μs, Duty Cycle 1%
<R> 2. Starting Tch = 25°C, VDD = 20 V, RG = 25 Ω, VGS = 20 0 V
V
V
A
A
W
W
°C
°C
A
mJ
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
3.9
125
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D19075EJ2V0DS00 (2nd edition)
Date Published March 2008 NS
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2007






NP20P04SLG Datasheet, Funktion
PACKAGE DRAWING (Unit: mm)
TO-252 (MP-3ZK)
6.5±0.2
5.1 TYP.
4.3 MIN.
4
2.3±0.1
0.5±0.1
No Plating
NP20P04SLG
123
1.14 MAX.
2.3 2.3
No Plating
0.76±0.12
0 to 0.25
0.5±0.1
1. Gate
2. Drain
3. Source
4. Fin (Drain)
1.0
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
6 Data Sheet D19075EJ2V0DS

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