Datenblatt-pdf.com


FQD12N20LTM_F085 Schematic ( PDF Datasheet ) - Fairchild Semiconductor

Teilenummer FQD12N20LTM_F085
Beschreibung 200V Logic Level N-Channel MOSFET
Hersteller Fairchild Semiconductor
Logo Fairchild Semiconductor Logo 




Gesamt 9 Seiten
FQD12N20LTM_F085 Datasheet, Funktion
June 2010
FQD12N20LTM_F085
200V Logic Level N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supply, motor control.
Features
• 9.0A, 200V, RDS(on) = 0.28@VGS = 10 V
• Low gate charge ( typical 16 nC)
• Low Crss ( typical 17 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low level gate drive requirement allowing direct
opration from logic drivers
Qualified to AEC Q101
RoHS Compliant
D
GS
D-PAK
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
IAR
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source Voltage
Avalanche Current
(Note 1)
(Note 1)
dv/dt
PD
TJ, TSTG
TL
Peak Diode Recovery dv/dt
(Note 2)
Power Dissipation (TA = 25°C) *
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

!
"
!"
!
"
"
!

FQD12N20LTM_F085
200
9.0
5.7
36
± 20
9.0
5.5
2.5
55
0.44
-55 to +150
300
Units
V
A
A
A
V
A
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθJA
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
©2010 Fairchild Semiconductor Corporation
FQD12N20LTM_F085 Rev. B
1
Typ Max Units
-- 2.27 °C/W
-- 50 °C/W
-- 110 °C/W
www.fairchildsemi.com






FQD12N20LTM_F085 Datasheet, Funktion
Gate Charge Test Circuit & Waveform
50KΩ
Same Type
as DUT
12V 200nF
300nF
VGS
5V
Qg
VGS
VDS
Qgs Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
VGS
RG
RL
VDD
VDS
90%
5V
DUT
VGS 10%
td(on)
tr
t on
td(off)
tf
t off
FQD12N20LTM_F085 Rev. B
6
www.fairchildsemi.com

6 Page







SeitenGesamt 9 Seiten
PDF Download[ FQD12N20LTM_F085 Schematic.PDF ]

Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
FQD12N20LTM_F085200V Logic Level N-Channel MOSFETFairchild Semiconductor
Fairchild Semiconductor

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com       |      2020       |      Kontakt     |      Suche