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Teilenummer | FQD12N20LTM_F085 |
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Beschreibung | 200V Logic Level N-Channel MOSFET | |
Hersteller | Fairchild Semiconductor | |
Logo | ||
Gesamt 9 Seiten June 2010
FQD12N20LTM_F085
200V Logic Level N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supply, motor control.
Features
• 9.0A, 200V, RDS(on) = 0.28Ω @VGS = 10 V
• Low gate charge ( typical 16 nC)
• Low Crss ( typical 17 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low level gate drive requirement allowing direct
opration from logic drivers
• Qualified to AEC Q101
• RoHS Compliant
D
GS
D-PAK
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
IAR
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source Voltage
Avalanche Current
(Note 1)
(Note 1)
dv/dt
PD
TJ, TSTG
TL
Peak Diode Recovery dv/dt
(Note 2)
Power Dissipation (TA = 25°C) *
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
!
"
!"
!
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"
!
FQD12N20LTM_F085
200
9.0
5.7
36
± 20
9.0
5.5
2.5
55
0.44
-55 to +150
300
Units
V
A
A
A
V
A
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθJA
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
©2010 Fairchild Semiconductor Corporation
FQD12N20LTM_F085 Rev. B
1
Typ Max Units
-- 2.27 °C/W
-- 50 °C/W
-- 110 °C/W
www.fairchildsemi.com
Gate Charge Test Circuit & Waveform
50KΩ
Same Type
as DUT
12V 200nF
300nF
VGS
5V
Qg
VGS
VDS
Qgs Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
VGS
RG
RL
VDD
VDS
90%
5V
DUT
VGS 10%
td(on)
tr
t on
td(off)
tf
t off
FQD12N20LTM_F085 Rev. B
6
www.fairchildsemi.com
6 Page | ||
Seiten | Gesamt 9 Seiten | |
PDF Download | [ FQD12N20LTM_F085 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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