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Teilenummer | L9015SLT1G |
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Beschreibung | General Purpose Transistors | |
Hersteller | Leshan Radio Company | |
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Gesamt 4 Seiten LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
FEATURE
ƽComplementary to L9014.
ƽ We declare that the material of product compliance with RoHS requirements.
ƽ S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
L9015QLT1G
Series
S-L9015QLT1G
Series
DEVICE MARKING AND ORDERING INFORMATION
Device
L9015QLT1G
S-L9015QLT1G
L9015QLT3G
S-L9015QLT3G
L9015RLT1G
S-L9015RLT1G
L9015RLT3G
S-L9015RLT3G
L9015SLT1G
S-L9015SLT1G
L9015SLT3G
S-L9015SLT3G
Marking
15Q
15Q
15R
15R
15S
15S
Shipping
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector current-continuoun
Symbol
VCEO
VCBO
VEBO
IC
Value
-45
-50
-5
-100
Unit
V
V
V
mA
THERMAL CHARATEERISTICS
Characteristic
Total Device Dissipation FR-5 Board.(1)
TA=25oC
Derate above 25oC
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA=25 oC
Derate above 25oC
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Symbol
PD
RJA
PD
RJA
TJ ,Tstg
Max
225
1.8
556
300
2.4
417
-55 to +150
Unit
mW
mW/oC
oC/W
mW
mW/oC
oC/W
oC
3
1
2
SOT– 23
COLLECTOR
3
1
BASE
2
EMITTER
Rev.O 1/4
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ L9015SLT1G Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
L9015SLT1G | General Purpose Transistors | Leshan Radio Company |
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