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Teilenummer | FDC3535 |
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Beschreibung | P-Channel Power Trench MOSFET | |
Hersteller | Fairchild Semiconductor | |
Logo | ||
Gesamt 7 Seiten FDC3535
P-Channel Power Trench® MOSFET
-80 V, -2.1 A, 183 mΩ
June 2010
Features
General Description
Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A
Max rDS(on) = 233 mΩ at VGS = -4.5 V, ID = -1.9 A
High performance trench technology for extremely low rDS(on)
High power and current handling capability in a widely used
surface mount package
Fast switching speed
100% UIL Tested
RoHS Compliant
This P-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process that has
been optimized for rDS(on), switching performance and
ruggedness.
Applications
Load Switch
Synchronous Rectifier
S
D
D
Pin 1
D
D
SuperSOTTM -6
G
S4
D5
D6
3G
2D
1D
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
(Note 1b)
Ratings
-80
±20
-2.1
-10
37
1.6
0.7
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
30
78
°C/W
Device Marking
.535
Device
FDC3535
Package
SSOT-6
Reel Size
7 ’’
Tape Width
8 mm
Quantity
3000 units
©2010 Fairchild Semiconductor Corporation
FDC3535 Rev. C
1
www.fairchildsemi.com
Dimensional Outline and Pad Layout
©2010 Fairchild Semiconductor Corporation
FDC3535 Rev. C
6
www.fairchildsemi.com
6 Page | ||
Seiten | Gesamt 7 Seiten | |
PDF Download | [ FDC3535 Schematic.PDF ] |
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