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PDF MJE13003B Data sheet ( Hoja de datos )
| Número de pieza | MJE13003B | |
| Descripción | TRANSISTORS | |
| Fabricantes | SI Semiconductors | |
| Logotipo |  |
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Shenzhen SI Semiconductors Co., LTD.
MJE
/MJE SERIES TRANSISTORS
Product Specification
MJE13003B
FEATURES
RoHS
■HIGH VOLTAGE CAPABILITY HIGH SPEED SWITCHING WIDE SOA RoHS COMPLIANT
APPLICATION: FLUORESCENT LAMP
ELECTRONIC BALLAST
SWITCH MODE POWER SUPPLY
Tc=25°C
Absolute Maximum Ratings Tc=25°C TO-220/TO-220S
PARAMETER
-
Collector-Base Voltage
-
Collector-Emitter Voltage
-
Emitter- Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
VCBO
VCEO
VALUE
600
400
VEBO
IC
9
2.0
PC 40
Tj 150
Tstg -65-150
UNIT
V
V
V
A
W
°C
°C
ELECTRONIC TRANSFORMER
Tc=25°C
Electronic Characteristics Tc=25°C
CHARACTERISTICS
-
Collector-Base Cutoff Current
-
Collector-Emitter Cutoff Current
-
Collector-Emitter Voltage
-
Emitter- Base Voltage
-
Collector-Emitter Saturation
Voltage
-
Base-Emitter Saturation Voltage
DC Current Gain
Storage Time
Falling Time
SYMBOL
ICBO
TEST CONDITION
VCB=600V
ICEO VCE=400V,IB=0
VCEO
IC=10mA,IB=0
VEBO
Vcesat
Vbesat
hFE
tS
tf
IE=1mA,IC=0
IC=0.5A,IB=0.1A
IC=1.5A,IB=0.5A
IC=0.5A,IB=0.1A
VCE=5V,IC=1mA
VCE=10V,IC=0.1A
VCE=5V,IC=2.0A
VCC=5V,IC=0.25A
(UI9600)
MIN
400
9
7
10
5
1.5
MAX
100
250
0.35
0.85
1.2
40
3.0
0.8
UNIT
µA
µA
V
V
V
V
µs
Si semiconductors 2011.05
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MJE13003B.PDF ] | |
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