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FGA40N65SMD Schematic ( PDF Datasheet ) - Fairchild Semiconductor

Teilenummer FGA40N65SMD
Beschreibung 40A Field Stop IGBT
Hersteller Fairchild Semiconductor
Logo Fairchild Semiconductor Logo 




Gesamt 9 Seiten
FGA40N65SMD Datasheet, Funktion
FGA40N65SMD
650 V, 40 A Field Stop IGBT
Features
• Maximum Junction Temperature : TJ = 175oC
• Positive Temperature Co-efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 40 A
• Fast Switching : EOFF = 6.5 uJ/A
• Tighten Parameter Distribution
• RoHS Compliant
Applications
• Solar Inverter, UPS, Welder, PFC, Induction Heating
• Telecom, ESS
August 2014
General Description
Using novel field stop IGBT technology, Fairchild’s new series of
field stop 2nd generation IGBTs offer the optimum performance
for solar inverter, UPS, welder, induction heating, telecom, ESS
and PFC applications where low conduction and switching
losses are essential.
C
G CE
TO-3PN
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM (1)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate to Emitter Voltage
Collector Current
Collector Current
@ TC = 25oC
@ TC = 100oC
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
@ TC = 25oC
@ TC = 100oC
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
@ TC = 25oC
@ TC = 100oC
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
G
E
Ratings
650
± 20
± 30
80
40
120
40
20
120
349
174
-55 to +175
-55 to +175
300
Unit
V
V
V
A
A
A
A
A
A
W
W
oC
oC
oC
©2011 Fairchild Semiconductor Corporation
FGA40N65SMD Rev. C5
1
www.fairchildsemi.com






FGA40N65SMD Datasheet, Funktion
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Collector Current
1000
100
td(off)
10
1
20
tf
Common Emitter
VGE = 15V, RG = 6Ω
TC = 25oC
TC = 175oC
30 40 50 60 70
Collector Current, IC [A]
80
Figure 15. Load Current vs. Frequency
250
Square Wave
TJ <= 175oC, D = 0.5, VCE = 400V
200 VGE = 15/0V, RG = 6Ω
150
TC = 75oC
100
TC = 100oC
50
0
1k 10k 100k
Switching Frequency, f[Hz]
1M
Figure 17. Forward Characteristics
200
100
10
1
0
TC = 175oC
TC = 125oC
TC = 75oC
TC = 25oC
TC = 175oC
TC = 125oC
TC = 75oC
TC = 25oC
123
Forward Voltage, VF [V]
4
Figure 14. Switching Loss vs.
Collector Current
6
Common Emitter
VGE = 15V, RG = 6Ω
TC = 25oC
TC = 175oC
Eon
1 Eoff
0.120
30 40 50 60
Collector Current, IC [A]
70
80
Figure 16. SOA Characteristics
300
100 10μs
100μs
10
1 ms
10ms
DC
1
*Notes:
0.1 1. TC = 25oC
2. TJ = 175oC
3. Single Pulse
0.01
1 10
100
Collector-Emitter Voltage, VCE [V]
1000
Figure 18. Reverse Recovery Current
12
10
TC = 25oC
TC = 175oC
8
6 di/dt =100A/uS
di/dt = 200A/uS
4
2
0
0 10 20 30 40
Forward Current, IF [A]
©2011 Fairchild Semiconductor Corporation
FGA40N65SMD Rev. C5
6
www.fairchildsemi.com

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