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AF15N50 Schematic ( PDF Datasheet ) - BCD

Teilenummer AF15N50
Beschreibung 50V N-Channel MOSFET
Hersteller BCD
Logo BCD Logo 




Gesamt 9 Seiten
AF15N50 Datasheet, Funktion
Data Sheet
50V N-Channel MOSFET
AF15N50
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency and to
minimize switch node ringing of DC-DC converters
using either synchronous or conventional switching
PWM controllers. It has been optimized for low gate
charge, low RDS(ON), fast switching speed and body
diode reverse recovery performance.
The AF15N50 is available in PDFN-5×6-8 package.
Features
• Typ RDS(ON)=14.32m@ VGS=10V, ID=15A
Typ RDS(ON)=16.36m@ VGS=4.5V, ID=15A
• RoHS Compliant
Applications
• Primary Switch in Isolated DC-DC
• Synchronous Rectifier
• Load Switch
Option 1
PDFN-5×6-8
Option 2
Figure 1. Package Type of AF15N50
Aug. 2013 Rev. 1. 0
BCD Semiconductor Manufacturing Limited
1






AF15N50 Datasheet, Funktion
50V N-Channel MOSFET
Typical Performance Characteristics
TC=25°C, unless otherwise noted.
Data Sheet
AF15N50
14
12
10
8
6
4
2
0
-2
0
1234
V , Drain to Source Voltage (V)
DS
5
Figure 4. On Region Characteristics
10000
1000
100
f=1MHz
C Ave
iss
C Ave
oss
C Ave
rss
10
0 5 10 15 20 25 30 35 40
V , Drain to Source Voltage (V)
DS
Figure 5. Typical Junction Capacitance
0.05
-55oC
25oC
0.04 85oC
125oC
150oC
0.03
0.02
0.01
I =15A
D
0.00
2 3 4 5 6 7 8 9 10 11
V , Gate to Source Voltage (V)
GS
Figure 6. Typical Transfer Characteristics
100
10
1
0.1
0.01
1E-3
1E-4
1E-5
0.0
25oC
125oC
0.2 0.4 0.6 0.8 1.0
V , Source to Drain Voltage (V)
SD
1.2
Figure 7. Source to Drain Diode Forward Voltage
Aug. 2013 Rev. 1. 0
BCD Semiconductor Manufacturing Limited
6

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