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K4069 Schematic ( PDF Datasheet ) - Renesas

Teilenummer K4069
Beschreibung N-CHANNEL POWER MOSFET
Hersteller Renesas
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Gesamt 8 Seiten
K4069 Datasheet, Funktion
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4069
SWITCHING
N-CHANNEL POWER MOSFET
DESCRIPTION
The 2SK4069 is N-channel MOS FET device that features a low on-state resistance and excellent switching
characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous
rectifier.
FEATURES
Low on-state resistance
RDS(on)1 = 12 mΩ MAX. (VGS = 10 V, ID = 15 A)
Low QGD: QGD = 3.2 nC TYP.
4.5 V drive available
ORDERING INFORMATION
<R>
PART NUMBER
2SK4069(1)-S27-AY Note
2SK4069-ZK-E1-AY Note
2SK4069-ZK-E2-AY Note
PACKAGE
TO-251 (MP-3-b)
TO-252 (MP-3ZK)
TO-252 (MP-3ZK)
Note Pb-free (This product does not contain Pb in external electrode.)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
25
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±30
±120
Total Power Dissipation (TC = 25°C)
PT1 21
Total Power Dissipation
PT2 1.0
Channel Temperature
Tch 150
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg 55 to +150
IAS 18
EAS 32.4
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. PW 10 μs, Duty Cycle 1%
2. Starting Tch = 25°C, VDD = 12 V, RG = 25 Ω, VGS = 20 0 V, L = 100 μH
(TO-251)
(TO-252)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18032EJ3V0DS00 (3rd edition)
Date Published March 2007 NS CP(K)
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2006






K4069 Datasheet, Funktion
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
100
IAS = 18 A
10 EAS = 32.4 mJ
VDD = 12 V
VGS = 20 0 V
RG = 25 Ω
Starting Tch = 25°C
1
0.01
0.1
1
L - Inductive Load – mH
10
2SK4069
SINGLE AVALANCHE ENERGY
DERATING FACTOR
120
VDD = 12 V
100 RG = 25 Ω
VGS = 20 0 V
80 IAS 18 A
60
40
20
0
25 50 75 100 125 150
Starting Tch - Starting Channel Temperature - °C
6 Data Sheet D18032EJ3V0DS

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