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PDF MUR2015FCT Data sheet ( Hoja de datos )
| Número de pieza | MUR2015FCT | |
| Descripción | ISOLATION SUPER FAST RECOVERY RECTIFIER | |
| Fabricantes | GOOD ELECTRONIC | |
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MUR2005FCT THRU MUR2060FCT
0.406(10.3)
0.381(9.7)
Ø 0.134(3.4)
Ø 0.118(3.0)
ISOLATION SUPER FAST RECOVERY RECTIFIER
Reverse Voltage - 50 to 600 Volts Forward Current - 20.0 Ampere
ITO-220AB
FEATURES
0.130(3.3)
0.114(2.9)
0.189(4.8)
0.165(4.2)
◆ Plastic package has Underwriters Laboratory Flammability
Classification 94V-0.
Flame Retardant Epoxy Molding Compound.
◆ Exceeds environmental of MIL-S-19500/228
◆ Low power loss, high efficiency.
◆ Low forward voltage, high current capability.
◆ High surge capability.
◆ Super fast recovery times, high voltage.
◆ Epitaxial chip construction.
◆ In compliance with EU RoHS 2002/95/EC directives.
Pin 1
0.055(1.4)
0.039(1.0)
0.028(0.7)
0.019(0.5)
0.114(2.9)
0.098(2.5)
MECHANICAL DATA
Case: ITO-220AB, Molded plastic.
Terminals: Solderable per MIL-STD-750，Method 2026
Weight: 1.859 gram (0.0655 ounces).
Standard Packaging : Tube.
0.1(2.54)
TYP.
0.027(0.67)
0.022(0.57)
Dimensions in inches and (millimeters)
AC 1
AC 3
2
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwis e specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
PARAMETER
Maximum Recurrenent Peak Reverse Voltage
MUR
MUR
MUR
MUR
MUR
MUR
SYMBOLS
UNITS
2005FCT 2010FCT 2015FCT 2020FCT 2040FCT 2060FCT
VRRM
50
100 150 200 400 600 Volts
Maximum RMS Voltage
VRMS
35
70 105 140 280 420 Volts
Maximum DC Breakdown Voltage
VDC 50 100 150 200 400 600 Volts
Maximum Average Forward Current at TC =100°C
IF(AV)
Peak Forward Surge Current (Per Leg)
8.3ms single half sinewave superimposed on rated olad(JEDEC methode)
Maximum Forward Voltage at 10A
at IF=10.0A
Pre diode
Maximum DC Reverse Current at
Rated DC Blocking Voltage
TJ=25°C
TJ=100°C
Maximum Reverse Recovery Time (NOTE 2)
IFSM
VF
IR
trr
0.975
35
20.0
125.0
10.0
500
1.30
1.70
50
Amp
Amps
Volts
µA
nS
Typical Junction Capacitance (NOTE 1)
CJ
120 pF
Typical Thermal Resistance
Rθ JC
3.0 °C/W
Operating and Storage Temperature Range
TSTG
-55 ～ +150
°C
Note: 1. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2. Reverse Recovery Test Conditions: IF=0.5A, IR=1A, Irr=0.25A.
3. Both Bonding and Chip structure are availiable.
GOOD ELECTRONIC CO., LTD
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