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PDF TPCS8105 Data sheet ( Hoja de datos )
| Número de pieza | TPCS8105 | |
| Descripción | Silicon N Channel MOS Type Field Effect Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TPCS8105
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
TPCS8105
Lithium Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications
Unit: mm
• Small footprint due to small and thin package
• Low drain-source ON resistance: RDS (ON) = 9.6 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 23 S (typ.)
• Low leakage current: IDSS = −10 μA (max) (VDS = −30 V)
• Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
1,2,3
4
5,6,7,8
Source
Gate
Drain
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (t = 10 s)
(Note 2a)
Drain power dissipation (t = 10 s)
(Note 2b)
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Note 2a) (Note 4)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
PD
EAS
IAR
EAR
Tch
Tstg
Rating
−30
−30
±20
−10
−40
1.1
0.6
26
−10
0.11
150
−55 to 150
Unit
V
V
V
A
W
W
mJ
A
mJ
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-3R1F
Weight: 0.035 g (typ.)
Circuit Configuration
8765
1234
Note: (Note 1), (Note 2), (Note 3) and (Note 4): See the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Please handle with caution.
1 2006-11-16
1 page  
RDS (ON) – Ta
20
Common source
Pulse test
16
ID = −11 A
12 VGS = −4 V
−5
ID = −11 A
−2.5
−2.5
8 −5
4 VGS = −10 V
0
−80 −40
0
40 80 120 160
Ambient temperature Ta (°C)
TPCS8105
IDR – VDS
−100
−10 −5 −3
−10
−1
VGS = 0 V
−1
−0.1
0
Common source
Ta = 25°C
Pulse test
0.2 0.4 0.6 0.8 1.0
Drain−source voltage VDS (V)
10000
Capacitance – VDS
Ciss
1000
Coss
Crss
100
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
10
−0.1
−1
−10
Drain−source voltage VDS
(V)
−100
2.0
1.6
1.2
(1)
0.8
(2)
0.4
PD – Ta
(1) Device mounted on a
glass-epoxy board (a) (Note 2a)
(2) Device mounted on a
glass-epoxy board (b) (Note 2b)
t = 10 s
0
0 25 50 75 100 125 150 175
Ambient temperature Ta (°C)
Vth – Ta
−2.5
Common source
VDS = −10 V
−2.0
ID = −1 mA
Pulse test
−1.5
−1.0
−0.5
0
−80 −40
0
40 80 120 160
Ambient temperature Ta (°C)
Dynamic input/output
characteristics
−30 −12
−25 VDD = −24 V
−20 VDS
−12
−15
−6
−10
−5
−6
−12
VDD = −24 V
VGS
Common source
ID = −11 A
Ta = 25°C
Pulse test
−10
−8
−6
−4
−2
00
0 20 40 60 80 100 120 140
Total gate charge Qg (nC)
5 2006-11-16
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TPCS8105.PDF ] | |
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