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PDF TPCT4203 Data sheet ( Hoja de datos )
| Número de pieza | TPCT4203 | |
| Descripción | Silicon N Channel MOS Type Field Effect Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de TPCT4203 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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TPCT4203
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ)
TPCT4203
Lithium-Ion Battery Applications (1Cell)
z Lead(Pb)-Free
z Small footprint due to a small and thin package
z Low source-source ON-resistance: RSS (ON) = 25.5 mΩ (typ.)
z High forward transfer admittance: |Yfs| = 18 S (typ.)
z Low leakage current: ISSS = 10 μA (max) (VSS = 20 V)
z Enhancement mode: Vth = 0.5 to 1.2 V (VSS = 10 V, IS = 200 μA)
z Common drain
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Source-source voltage
VSSS 20 V
Gate-source voltage
VGSS ±12 V
DC
Source current
Pulse
(Note 1)
(Note 1)
IS
ISP
6
A
24
Power dissipation
(t = 10 s)
(Note 2a, 3)
PD
1.47 W
Power dissipation
(t = 10 s)
(Note 2b, 3)
PD
0.47 W
Single-pulse avalanche energy
(Note 4)
Avalanche current
Repetitive avalanche energy
(Note 2a, 5)
Channel temperature
Storage temperature range
EAS
IAR
EAR
Tch
Tstg
46.8
6
0.058
150
−55 to 150
mJ
A
mJ
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
3.8±0.1
0.375
0.375
1
2
B
0.14±0.04
4
3
0.025 M B
S 0.05 S
2
0.3±0.1
0.4+0.1
-0.06 1
1.25±0.1
3
0.35+0.06
-0.1
4
1.93±0.1 0.2±0.05
1.GATE 1
2.GATE 2
JEDEC
3.SOURCE 2
4.SOURCE 1
―
JEITA
―
TOSHIBA
2-2V1A
Weight: 9.7 mg (typ.)
Circuit Configuration
FET1
1
4
23
FET2
1 2008-12-27
1 page  
RSS (ON) – Ta (Note 7)
80
Pulse test
60
IS = 1.5,3.6 A
40
VGS = 2.5 V
20 3.1
4
4.5
IS = 1.5,3,6 A
0
−80 −40
0
40 80 120 160
Ambient temperature Ta (°C)
TPCT4203
10
Ta = 25°C
Pulse test
ISR – VSS (Note 10)
10 5
VGS = 3 V
1
0.1
0
−0.2
−0.4
−0.6
−0.8
−1.0
−1.2
Source −source voltage VSS (V)
10000
Capacitance – VSS (Note 8)
1000
Ciss
Coss
100
Crss
10
0.1
VGS = 0 V
f = 1 MHz
Ta = 25°C
1
10
Source −source voltage VSS (V)
100
Vth – Ta (Note 8)
1.5
1.2
0.9
0.6
0.3
VVDSSS==1100VV
IDIS==22000μμAA
PPuulslesetetestst
0
−80 −40
0
40 80 120
Ambient temperature Ta (°C)
160
2
1.6 (1)
1.2
PD – Ta
(1) Device mounted on a glass-epoxyboard
(a) (Note 2a)
(2) Device mounted on a glass-epoxyboard
(a) (Note 2b)
t = 10 s
0.8
(2)
0.4
0
0 40 80 120 160 200
Ambient temperature Ta (°C)
Dynamic input/outputcharacteristics
(Note 8)
25
IS = 6 A
10
Ta = 25°C
Pulse test
20 8
VSS = 16V
15
10
8
VSS
8
4
VGS
6
VSS = 16V
4
54
2
00
0 4 8 12 16
Total gate charge Qg (nC)
5 2008-12-27
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet TPCT4203.PDF ] | |
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