|
|
Teilenummer | STP13N60M2 |
|
Beschreibung | N-channel Power MOSFET | |
Hersteller | STMicroelectronics | |
Logo | ||
Gesamt 18 Seiten STP13N60M2, STU13N60M2,
STW13N60M2
N-channel 600 V, 0.35 Ω typ., 11 A MDmesh II Plus™ low Qg
Power MOSFETs in TO-220, IPAK and TO-247 packages
Datasheet − production data
TAB
3
2
1
TO-220
TAB
IPAK
3
2
1
3
2
1
TO-247
Figure 1. Internal schematic diagram
, TAB
Features
Order codes VDS @ TJmax RDS(on) max ID
STP13N60M2
STU13N60M2
650 V
0.38 Ω
11 A
STW13N60M2
• Extremely low gate charge
• Lower RDS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Description
AM15572v1
These devices are N-channel Power MOSFETs
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Qg. These
revolutionary Power MOSFETs associate a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. They are therefore suitable for the
most demanding high efficiency converters.
Order codes
STP13N60M2
STU13N60M2
STW13N60M2
Table 1. Device summary
Marking
Package
13N60M2
TO-220
IPAK
TO-247
February 2014
This is information on a product in full production.
DocID023937 Rev 5
Packaging
Tube
1/18
www.st.com
18
Electrical characteristics
STP13N60M2, STU13N60M2, STW13N60M2
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for TO-220 and
TO-247
ID AM15710v1
(A)
Figure 3. Thermal impedance for TO-220 and
TO-247
10 10µs
100 µS
1
0.1
0.1
1
1ms
Tj=150°C
Tc=25°C
Single pulse
10ms
10 100 VDS(V)
Figure 4. Safe operating area for IPAK
ID AM15711v1
(A)
10µs
10
100 µS
1
0.1
0.1
1
1ms
Tj=150°C
Tc=25°C
Single pulse
10ms
10 100 VDS(V)
Figure 6. Output characteristics
ID AM15712v1
(A) VGS=7, 8, 9, 10V
20
6V
16
12
8 5V
4
4V
0
0 4 8 12 16 VDS(V)
Figure 5. Thermal impedance for IPAK
Figure 7. Transfer characteristics
ID (A)
AM15713v1
20 VDS=18V
16
12
8
4
0
0 2 4 6 8 VGS(V)
6/18 DocID023937 Rev 5
6 Page Package mechanical data
Dim.
A
b
b1
c
D
D1
E
e
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
STP13N60M2, STU13N60M2, STW13N60M2
Table 9. TO-220 type A mechanical data
mm
Min.
Typ.
4.40
0.61
1.14
0.48
15.25
10
2.40
4.95
1.23
6.20
2.40
13
3.50
3.75
2.65
1.27
16.40
28.90
Max.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
3.85
2.95
12/18
DocID023937 Rev 5
12 Page | ||
Seiten | Gesamt 18 Seiten | |
PDF Download | [ STP13N60M2 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
STP13N60M2 | N-channel Power MOSFET | STMicroelectronics |
Teilenummer | Beschreibung | Hersteller |
CD40175BC | Hex D-Type Flip-Flop / Quad D-Type Flip-Flop. |
Fairchild Semiconductor |
KTD1146 | EPITAXIAL PLANAR NPN TRANSISTOR. |
KEC |
www.Datenblatt-PDF.com | 2020 | Kontakt | Suche |