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Teilenummer | S9012 |
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Beschreibung | PNP TRANSISTOR | |
Hersteller | JCST | |
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Gesamt 2 Seiten JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
S9012 TRANSISTOR (PNP)
SOT–23
FEATURES
z High Collector Current
z Complementary To S9013
z Excellent hFE Linearity
MARKING: 2T1
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
-40
VCEO Collector-Emitter Voltage
-25
VEBO Emitter-Base Voltage
-5
IC Collector Current
-500
PC Collector Power Dissipation
300
RΘJA Thermal Resistance From Junction To Ambient
416
Tj Junction Temperature
150
BDTICTstg StorageTemperature
-55~+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test conditions
Min Typ Max Unit
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Cob
IC=-0.1mA, IE=0
IC=-1mA, IB=0
IE=-0.1mA, IC=0
VCB=-40V, IE=0
VCE=-20V, IB=0
VEB=-5V, IC=0
VCE=-1V, IC=-50mA
IC=-500mA, IB=-50mA
IC=-500mA, IB=-50mA
VCE=-6V,IC=-20mA, f=30MHz
VCB=-10V, IE=0, f=1MHz
-40
-25
-5
120
150
V
V
V
-0.1 uA
-0.1 uA
-0.1 uA
400
-0.6 V
-1.2 V
MHz
5 pF
CLASSIFICATION OF hFE
RANK
RANGE
L
120-200
H
200-350
J
300-400
www.BDTIC.com/jcst
B,Nov,2011
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Seiten | Gesamt 2 Seiten | |
PDF Download | [ S9012 Schematic.PDF ] |
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