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PDF AOV20S60 Data sheet ( Hoja de datos )
| Número de pieza | AOV20S60 | |
| Descripción | Power Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AOV20S60
600V 18A α MOS TM Power Transistor
General Description
Product Summary
The AOV20S60 has been fabricated using the advanced
αMOSTM high voltage process that is designed to deliver
high levels of performance and robustness in switching
applications.
By providing low RDS(on), Qg and EOSS along with
guaranteed avalanche capability this part can be adopted
quickly into new and existing offline power supply designs.
VDS @ Tj,max
IDM
RDS(ON),max
Qg,typ
Eoss @ 400V
100% UIS Tested
100% Rg Tested
700V
80A
0.25Ω
20nC
4.9µJ
Top View
DFN8X8
Bottom View
D
G
Pin1:G
AOV20S60
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy G
IDSM
IAR
EAR
EAS
TC=25°C
Power Dissipation B Derate above 25oC
PD
TA=25°C
Power Dissipation A TA=70°C
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt H
PDSM
dv/dt
Junction and Storage Temperature Range
TJ, TSTG
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds J
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
t ≤ 10s
Steady-State
TL
Symbol
RθJA
Maximum Junction-to-Case
Steady-State
RθJC
Pin2: Driver Source
Maximum
600
±30
18
13
80
3.6
2.9
3.4
23
188
278
2.2
8.3
5.3
100
20
-55 to 150
Typ
12
40
0.35
300
G
Max
15
50
0.45
D
S
Units
V
V
A
A
A
mJ
mJ
W
W/ oC
W
V/ns
°C
°C
Units
°C/W
°C/W
°C/W
Rev.1.0: September 2013
www.aosmd.com
Page 1 of 7
1 page  
AOV20S60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20 5000
4000
15
3000
10
2000
5
1000
TJ(Max)=150°C
TC=25°C
0
0 25 50 75 100 125 150
TCASE (°C)
Figure 13: Current De-rating (Note B)
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1 RθJC=0.45°C/W
0
1E-05 0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-
Case (Note F)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01 Single Pulse
PD
Ton
T
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note F)
1
10
Rev.1.0: September 2013
www.aosmd.com
Page 5 of 7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet AOV20S60.PDF ] | |
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