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PDF IRG4PH40UDPbF Data sheet ( Hoja de datos )
| Número de pieza | IRG4PH40UDPbF | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD- 95188A
IRG4PH40UDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features
C
UltraFast: Optimized for high operating
frequencies up to 40 kHz in hard switching,
>200 kHz in resonant mode
New IGBT design provides tighter
parameter distribution and higher efficiency than
previous generations
IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
Industry standard TO-247AC package
Lead-Free
Benefits
Higher switching frequency capability than
competitive IGBTs
Highest efficiency available
HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
G
E
n-channel
VCES = 1200V
VCE(on) typ. = 2.43V
@VGE = 15V, IC = 21A
TO-247AC
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Max.
1200
41
21
82
82
8.0
130
± 20
160
65
-55 to + 150
300 (0.063 in. (1.6mm) from case )
10 lbfin (1.1Nm)
Units
V
A
V
W
°C
Min.
Typ.
0.24
6 (0.21)
Max.
0.77
1.7
40
Units
°C/W
g (oz)
1
05/27/11
1 page  
4000
3000
2000
VCGiesE
=
=
0V,
Cge
+
f = 1MHz
Cgc , Cce
SHORTED
CCroeess
=
=
CCgcec
+
Cgc
Cies
1000
0
1
Coes
Cres
10 100
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
IRG4PH40UDPbF
20 VCC = 400V
I C = 21A
16
12
8
4
0
0 20 40 60 80 100
QG , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
5.0 VCC = 800V
VGE
TJ
=
=
15V
25 °
C
IC = 21A
4.5
4.0
3.5
100 RG = 1O0hΩm
VGE = 15V
VCC = 800V
10
IC = 42A
IC = 21A
IC =10.5A
3.0
0
10 20 30 40
RGRG,,GGaattee RReessiissttaannccee((ΩO)hm)
50
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRG4PH40UDPbF.PDF ] | |
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