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Teilenummer | IKW40N120H3 |
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Beschreibung | IGBT | |
Hersteller | Infineon | |
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Gesamt 16 Seiten IGBT
HighspeedDuoPack:IGBTinTrenchandFieldstoptechnologywithsoft,fastrecovery
anti-paralleldiode
IKW40N120H3
1200Vhighspeedswitchingseriesthirdgeneration
Datasheet
IndustrialPowerControl
IKW40N120H3
Highspeedswitchingseriesthirdgeneration
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=25°C
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tvj=25°C,
VCC=600V,IC=40.0A,
VGE=0.0/15.0V,
RG(on)=12.0Ω,RG(off)=12.0Ω,
Lσ=70nH,Cσ=67pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
min.
Value
typ.
max. Unit
- 30 - ns
- 57 - ns
- 290 - ns
- 16 - ns
- 3.20 - mJ
- 1.20 - mJ
- 4.40 - mJ
DiodeCharacteristic,atTvj=25°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Tvj=25°C,
VR=600V,
IF=40.0A,
diF/dt=500A/µs
- 355 - ns
- 1.90 - µC
- 12.8 - A
- -150 - A/µs
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=175°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Tvj=175°C,
VCC=600V,IC=40.0A,
VGE=0.0/15.0V,
RG(on)=12.0Ω,RG(off)=12.0Ω,
Lσ=70nH,Cσ=67pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
min.
Value
typ.
max. Unit
- 29 - ns
- 49 - ns
- 366 - ns
- 48 - ns
- 4.40 - mJ
- 2.60 - mJ
- 7.00 - mJ
DiodeCharacteristic,atTvj=175°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Tvj=175°C,
VR=600V,
IF=40.0A,
diF/dt=500A/µs
- 639 - ns
- 4.30 - µC
- 16.0 - A
- -105 - A/µs
6 Rev.2.1,2014-11-26
6 Page IKW40N120H3
Highspeedswitchingseriesthirdgeneration
1
0.1 D=0.5
0.2
D=0.5
0.2
0.1 0.1
0.05 0.1
0.02
0.05
0.02
0.01 0.01
single pulse
single pulse
0.01
0.01
0.001
1E-6
i: 1
2
3
4
ri[K/W]: 0.06414 0.074055 0.162315 10.0E-3
τi[s]: 3.7E-4 3.9E-3 0.01916724 0.3399433
1E-5 1E-4 0.001 0.01
tp,PULSEWIDTH[s]
0.1
1
Figure 21. IGBTtransientthermalimpedance
(D=tp/T)
0.001
1E-6
i: 1
23
4
ri[K/W]: 0.290775 0.43377 0.363015 0.02781
τi[s]: 2.7E-4 2.6E-3 0.01477471 0.1784607
1E-5 1E-4 0.001 0.01
tp,PULSEWIDTH[s]
0.1
1
Figure 22. Diodetransientthermalimpedanceasa
functionofpulsewidth
(D=tp/T)
800
Tj=25°C, IF = 40A
Tj=175°C, IF = 40A
700
600
4
Tj=25°C, IF = 40A
Tj=175°C, IF = 40A
3
500
2
400
1
300
200
200 400 600 800 1000
diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 23. Typicalreverserecoverytimeasafunction
ofdiodecurrentslope
(VR=600V)
0
200 400 600 800 1000
diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 24. Typicalreverserecoverychargeasa
functionofdiodecurrentslope
(VR=600V)
12 Rev.2.1,2014-11-26
12 Page | ||
Seiten | Gesamt 16 Seiten | |
PDF Download | [ IKW40N120H3 Schematic.PDF ] |
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