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BD14000EFV-C Schematic ( PDF Datasheet ) - ROHM Semiconductor

Teilenummer BD14000EFV-C
Beschreibung Cell Balance LSI of 4 to 6 Series Power Storage Element Cells
Hersteller ROHM Semiconductor
Logo ROHM Semiconductor Logo 




Gesamt 21 Seiten
BD14000EFV-C Datasheet, Funktion
Datasheet
Simple design with built-in self-controlled cell balance features circuit
Cell Balance LSI of 4 to 6 Series Power
Storage Element Cells for Automotive
BD14000EFV-C
General Description
BD14000EFV is a LSI IC designed as a self-controlled
cell balancer. It has a built-in shunt-type power storage
element balancer function that can respond to 4 to 6
cells. All the functions necessary in a cell balancer are
built-in making power storage element cell balancing
possible only in this LSI.
This chip can be used for electric double layer
capacitors (EDLC) with cell detection voltage range of
2.4V to 3.1V and power storage capacitors which is
important for cell balancers with similar electrical
characteristics
Key Specifications
Input Voltage Range8.0V to 24.0V
Cell Voltage Detection Range2.4V to 3.1V
Cell Voltage Detection Accuracy:③1(Max. at
25°C)
Shunt Switch ON Resistance1(Typ.)
Operating Temp. Range -40°C to +105°C
Package
HTSSOP-B30
W (Typ) x D (Typ) x H (Max)
10.00mm x 7.60mm x 1.00mm
It has a built-in multiple over-voltage detection function
and can also detect abnormal mode such as any
characteristic deterioration in cells.
Also, application-dependent operation can be set since
enable control is possible.
Features
AEC-Q100 qualified(Note1)
All EDLC cell balancer functions are integrated on
a single chip
Self- controlled EDLC balance function
Adopts shunt resistance method for simple
balancing
4 to 6 cell series connection ready
Multiple chip series connection is possible
Built-in over-voltage detection flag output
Detection voltage can be set
(Note1 : Grade2)
Applications
Renewable energy power storage for Automotive,
Production machinery, Building machinery, etc.
UPS and other devices that stabilizes power
supplies
HTSSOP-B30
Typical Application Circuit
Figure 1 Typical application circuit
Product structure : Silicon monolithic integrated circuit
.www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
TSZ22111 • 14 • 001
This product has no designed protection against radioactive rays
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TSZ02201-0Q3Q0JZ00270-1-2
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BD14000EFV-C Datasheet, Funktion
BD14000EFV-C
Datasheet
Electrical Characteristics (Unless otherwise specified VCC=15V Ta=25°C)
Parameter
Symbol Min Typ Max Unit
Shunt SW
Switch on resistance
In between Dn-Sn (n=1~6)
Leak current during switch off
in between Dn-Sn (n=1~6)
Digital Input/ Output Terminal
Output L Level Voltage
(VO_OVLO1.2,VO_OK)
Leak Current when off
(VO_OVLO1.2,VO_OK)
Input H Level Voltage (ENIN)
Ronsw
ILEAIO
W
VOL
OVLO
ILFAK
OVLO
VIHEN
1.8
1.0 2.0
2 µA
0.2 0.5 V
2 µA
VREG
+0.2
V
Input L Level Voltage (ENIN)
VILEN
-0.3
0.4 V
Input current when H level input.
(ENIN)
IIHEN
3.5
7.0 µA
Input H Level Voltage
(VSET02,OVLOSEL)
VIH VREG
SET X0.8
VREG
+0.2
V
Input L Level Voltage
(VSET02,OVLOSEL)
VIL
SET
-0.3
VREG
X0.2
V
Input current when H level input
IIH
(VSET02,OVLOSEL)
SET
2 µA
Output current when L level input
(VSET02,OVLOSEL)
IIL
SET
2 µA
Conditions
Vcn-Vcn-1=2.5V
Vdn-Vsn-1=3.5V
IIN=5mA
VIN=3.5V
VIN=3.5V
VIN=3.5V
VIN=0.0V
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
TSZ22111 • 15 • 001
6/18
TSZ02201-0Q3Q0JZ00270-1-2
22.Jun.2015 Rev.002

6 Page









BD14000EFV-C pdf, datenblatt
BD14000EFV-C
Datasheet
Power Dissipation
The maximum allowable junction temperature Tj of BD14000EFV-C is 150°C. Therefore, it is necessary to design
the system requirements and the board layout so that the junction temperature does not exceed 150°C in the
operating temperature range.
・T
θ= ℃
θ= ℃
θ= ℃
θ= ℃
θ
T T [℃]
Figure 11. Power Dissipation
[Maximum value of shunt current for cell balance]
Temperature increase, Tup[°C], of this chip can be estimated by total power consumption Pall[W] and thermal resistance
θja[°C /W]:
Tup = Pall x θja
Almost all of the power of this chip is consumed by shunt switches:
Tup = n x Ron x Ishunt2 x θja
(Ron[] = shunt switch on resistance, Ishunt [A] = shunt current, n[pcs] = the number of cells)
So, the operating condition is described as follows:
Tj – Ta_max > Tup
(Ta_max[°C] = maximum operating temperature)
It is possible to decide shunt current value by using this expression.
(Example)
Tj=150°C, Ta_max=105°C,
θja=80.6°C /W (ROHM standard board, 1 layer board),
Ron_max=2.0, n=6pcs
By using the above expressions,
150 – 105 > 6 x 2 x Ishunt2 x 80.6
Ishunt < 0.215A
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
TSZ22111 • 15 • 001
12/18
TSZ02201-0Q3Q0JZ00270-1-2
22.Jun.2015 Rev.002

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