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RF6E045AJ Schematic ( PDF Datasheet ) - ROHM Semiconductor

Teilenummer RF6E045AJ
Beschreibung Nch 30V 4.5A Middle Power MOSFET
Hersteller ROHM Semiconductor
Logo ROHM Semiconductor Logo 




Gesamt 12 Seiten
RF6E045AJ Datasheet, Funktion
RF6E045AJ
  Nch 30V 4.5A Middle Power MOSFET
VDSS
RDS(on)(Max.)
ID
PD
30V
23.7mΩ
±4.5A
1W
lFeatures
1) Low on - resistance.
2) High Power Package (TUMT6).
3) Pb-free lead plating ; RoHS compliant.
4) Halogen Free.
lOutline
TUMT6
      
lInner circuit
   Datasheet
      
 
 
 
      
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
180
lApplication
Switching
Type Tape width (mm)
Basic ordering unit (pcs)
8
3000
Taping code
TCR
Marking
CJ
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Power dissipation
Junction temperature
Range of storage temperature
VDSS
ID
ID,pulse*1
VGSS
PD*2
Tj
Tstg
30
±4.5
±18
±12
1
150
-55 to +150
V
A
A
V
W
                                              
                                                                                        
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/11
20150403 - Rev.002    






RF6E045AJ Datasheet, Funktion
RF6E045AJ
      
lElectrical characteristic curves
Fig.8 Typical Transfer Characteristics
        
Datasheet
Fig.9 Gate Threshold Voltage vs. Junction
 Temperature
Fig.10 Tranceconductance  vs. Drain
Current
                                                                                          
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
6/11
20150403 - Rev.002

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