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Teilenummer | RF6E045AJ |
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Beschreibung | Nch 30V 4.5A Middle Power MOSFET | |
Hersteller | ROHM Semiconductor | |
Logo | ||
Gesamt 12 Seiten RF6E045AJ
Nch 30V 4.5A Middle Power MOSFET
VDSS
RDS(on)(Max.)
ID
PD
30V
23.7mΩ
±4.5A
1W
lFeatures
1) Low on - resistance.
2) High Power Package (TUMT6).
3) Pb-free lead plating ; RoHS compliant.
4) Halogen Free.
lOutline
TUMT6
lInner circuit
Datasheet
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
180
lApplication
Switching
Type Tape width (mm)
Basic ordering unit (pcs)
8
3000
Taping code
TCR
Marking
CJ
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Power dissipation
Junction temperature
Range of storage temperature
VDSS
ID
ID,pulse*1
VGSS
PD*2
Tj
Tstg
30
±4.5
±18
±12
1
150
-55 to +150
V
A
A
V
W
℃
℃
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/11
20150403 - Rev.002
RF6E045AJ
lElectrical characteristic curves
Fig.8 Typical Transfer Characteristics
Datasheet
Fig.9 Gate Threshold Voltage vs. Junction
Temperature
Fig.10 Tranceconductance vs. Drain
Current
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
6/11
20150403 - Rev.002
6 Page 12 Page | ||
Seiten | Gesamt 12 Seiten | |
PDF Download | [ RF6E045AJ Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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