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BD1LB500EFJ-C Schematic ( PDF Datasheet ) - ROHM Semiconductor

Teilenummer BD1LB500EFJ-C
Beschreibung In-Vehicle 1ch Low Side Switch
Hersteller ROHM Semiconductor
Logo ROHM Semiconductor Logo 




Gesamt 19 Seiten
BD1LB500EFJ-C Datasheet, Funktion
Datasheet
1ch Low Side Switch IC
In-Vehicle 1ch Low Side Switch
BD1LB500 Series (BD1LB500EFJ-C BD1LB500FVM-C)
Features
Built-in overcurrent limiting circuit
Built-in thermal shutdown circuit (TSD)
Built-in open load detection circuit (at output OFF)
Enables direct control from CMOS logic ICs, etc.
Low standby current
Built-in under voltage lock out circuit
Built-in diagnostic output (ST) terminal
Low ON resistance RDS(ON)=350m(Typ) (VDD=IN=5V,
Ta=25°C, IOUT=0.25A)
Built-in overvoltage protection(active clamp) for output
circuit
Monolithic power IC in which the control unit (CMOS)
and power MOS FET are incorporated into one chip
1ch low side switch for driving mechanical relay coil
AEC-Q100 Qualified(1)
(1) Grade1
Overview
BD1LB500 Series is an in-vehicle 1ch low side switch.
This switch builds in the overcurrent limiting circuit,
thermal shutdown circuit, open load detection circuit and
under voltage lock out circuit. It also provides the
diagnostic output circuit when an abnormality is
detected.
Application
In-vehicle application (Air conditioners, body devices,
meters, etc.)
Basic Application Circuit (Recommendation)
VDD
Specifications
Operating voltage range
ON resistance (25°C, Typ.)
Overcurrent limitation (Typ.)
Active clamp energy (25°C)
3.5V to 5.5V
350m
1.50A
25mJ
Package
HTSOP-J8
MSOP8
4.90mm x 6.00mm x 1.00mm
2.90mm x 4.00mm x 0.90mm
HTSOP-J8
VBAT
RL
MSOP8
0.1µF
8
VDD
Logic
7
N.C.
6
DRAIN
Under voltage
lock out
Open load
detection
Overvoltage
protection
5
DRAIN
Rext (2)
Over current
Limit
SOURCE
IN
ST
SOURCE (GND)
(GND)
1234
10k (3)
(2) When the open detection function is required, an external resistance must be added between DRAIN terminal and SOURCE terminal.
(3) It is necessary to detect unusual state(ST terminal is low) when VDD terminal is opened.
Product configuration: Silicon monolithic integrated circuit
www.rohm.co.jp
© 2015 ROHM Co., Ltd. All rights reserved.
TSZ2211114001
The product is not designed for radiation resistance.
1/16
TSZ02201-0G3G0BD00040-1-2
2015.04.01 Rev.006






BD1LB500EFJ-C Datasheet, Funktion
BD1LB500 Series
Measuring Circuit Diagram
Datasheet
Figure 2. Output ON Resistance Measuring
Circuit Diagram
Figure 3. Switching Time Measuring Circuit
Diagram
Figure 4. Output Clamp Voltage Measuring
Circuit Diagram
Figure 5. Open Detection Measuring Circuit
Diagram
www.rohm.co.jp
© 2015 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
6/16
TSZ02201-0G3G0BD00040-1-2
2015.04.01 Rev.006

6 Page









BD1LB500EFJ-C pdf, datenblatt
BD1LB500 Series
I/O Equivalent Circuits
Pin Symbol
1 IN
I/O Equivalent Circuits
Datasheet
2 ST
3.4
SOURCE
GND
DRAIN
5,6 DRAIN
8
Cooling Tab
VDD
TAB
www.rohm.co.jp
© 2015 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
SOURCE
(GND)
12/16
TSZ02201-0G3G0BD00040-1-2
2015.04.01 Rev.006

12 Page





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