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FNA51060T3 Schematic ( PDF Datasheet ) - Fairchild Semiconductor

Teilenummer FNA51060T3
Beschreibung Motion SPM 55 Series
Hersteller Fairchild Semiconductor
Logo Fairchild Semiconductor Logo 




Gesamt 14 Seiten
FNA51060T3 Datasheet, Funktion
FNA51060T3
Motion SPM® 55 Series
September 2014
Features
• UL Certified No. E209204 (UL1557)
• 600 V - 10 A 3-Phase IGBT Inverter Including Control
IC for Gate Drive and Protections
• Low-Loss, Short-Circuit Rated IGBTs
• Separate Open-Emitter Pins from Low-Side IGBTs for
Three-Phase Current Sensing
• Active-HIGH interface, works with 3.3 / 5 V Logic,
Schmitt-trigger Input
• HVIC for Gate Driving, Under-Voltage and Short-Cir-
cuit Current Protection
• Fault Output for Under-Voltage and Short-Circuit Cur-
rent Protection
• Inter-Lock Function to Prevent Short-Circuit
• Shut-Down Input
• HVIC Temperature-Sensing Built-In for Temperature
Monitoring
• Optimized for 5 kHz Switching Frequency
• Isolation Rating: 1500 Vrms / min.
General Description
FNA51060T3 is a Motion SPM 55 module providing a
fully-featured, high-performance inverter output stage for
AC Induction, BLDC, and PMSM motors. These modules
integrate optimized gate drive of the built-in IGBTs to
minimize EMI and losses, while also providing multiple
on-module protection features including under-voltage
lockouts, inter-lock function, over-current shutdown,
thermal monitoring of drive IC, and fault reporting. The
built-in, high-speed HVIC requires only a single supply
voltage and translates the incoming logic-level gate
inputs to the high-voltage, high-current drive signals
required to properly drive the module's robust short-
circuit-rated IGBTs. Separate negative IGBT terminals
are available for each phase to support the widest
variety of control algorithms.
Applications
• Motion Control - Home Appliance / Industrial Motor
Related Resources
Figure 1. 3D Package Drawing
(Click to Activate 3D Content)
Package Marking and Ordering Information
Device
FNA51060T3
Device Marking
FNA51060T3
Package
SPMFA-A20
Packing Type
RAIL
Quantity
13
©2014 Fairchild Semiconductor Corporation
FNA51060T3 Rev. C0
1
www.fairchildsemi.com






FNA51060T3 Datasheet, Funktion
Electrical Characteristics (TJ = 25°C, unless otherwise specified.)
Inverter Part
Symbol
Parameter
Conditions
VCE(SAT)
VF
HS tON
tC(ON)
tOFF
tC(OFF)
trr
LS tON
tC(ON)
tOFF
tC(OFF)
trr
ICES
Collector - Emitter Saturation VDD = VBS = 15 V
Voltage
VIN = 5 V
IC = 10 A
TJ = 25°C
TJ = 150°C
FWDi Forward Voltage
VIN = 0 V
IF = 10 A
TJ = 25°C
TJ = 150°C
Switching Times
VPN = 400 V, VDD = VBS = 15 V, IC = 10A
TJ = 25°C
VIN = 0 V 5 V, Inductive load
(Note 7)
VPN = 400 V, VDD = VBS = 15 V, IC = 10A
TJ = 25°C
VIN = 0 V 5 V, Inductive load
(Note 7)
Collector - Emitter Leakage VCE = VCES
Current
Min. Typ. Max. Unit
-
1.45 1.85
V
- 1.65 -
V
- 1.85 2.3 V
- 1.75 -
V
- 700 -
ns
- 170 -
ns
- 800 -
ns
- 150 -
ns
- 90 - ns
- 750 -
ns
- 250 -
ns
- 800 -
ns
- 100 -
ns
- 80 - ns
- - 1 mA
Note:
7. tON and tOFF include the propagation delay of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally. For
the detailed information, please see Figure 4.
100% IC 100% IC
trr
VCE
IC
IC VCE
V IN
V IN (O N )
tON
10% IC
tC(ON)
90% IC 10% VCE
(a) turn-on
V IN
tOFF
V IN (O F F)
tC(OFF)
10% VCE
10% IC
(b) turn-off
Figure 4. Switching Time Definition
©2014 Fairchild Semiconductor Corporation
FNA51060T3 Rev. C0
6
www.fairchildsemi.com

6 Page









FNA51060T3 pdf, datenblatt
Gating UH
Gating VH
M Gating WH
C
U
CBS
CBSC
RS
CBS
CBSC
RS
RS
CPS CPS CPS
CBS
CBSC
15V line
CSP15
5V line
(20) VB(U)
(9) IN(UH)
(19) VB(V)
(11) IN(VH)
(18) VB(W)
CSPC15
(13) IN(WH)
(14) VDD
(15) COM
Fault
CBPF
Gating UL
Gating VL
Gating WL
RPF
RS
CPF
CSPC05 CSP05
RS
RS
RS
CPS CPS CPS
CSC
RF
(17) VF
(8) IN(UL)
(10) IN(VL)
(12) IN(WL)
(16) CSC
VB(U)
OUT(UH)
IN(UH)
VS(U)
VB(V)
IN(VH)
VB(W)
OUT(VH)
VS(V)
IN(WH)
VDD
COM
OUT(WH)
VS(W)
OUT(UL)
VF
IN(UL)
IN(VL)
IN(WL)
CSC
OUT(VL)
OUT(WL)
P (1)
U (2)
V (3)
W (4)
NU (5)
RSU
NV (6)
RSV
NW (7)
RSW
M
CDCS
VDC
Input Signal for
Short-Circuit Protection
Temp. Monitoring
U-Phase Current
V-Phase Current
W-Phase Current
Note:
1) To avoid malfunction, the wiring of each input should be as short as possible. (less than 2 ~ 3 cm)
2) By virtue of integrating an application specific type of HVIC inside the SPM® 55 product, direct coupling to MCU terminals without any opto-coupler or transformer isolation is
possible.
3) VF is open-drain type. This signal line should be pulled up to the positive side of the MCU or control power supply with a resistor that makes IFO up to 5 mA. Please refer to Fig-
ure 14.
4) CSP15 of around seven times larger than bootstrap capacitor CBS is recommended.
5) Input signal is active-HIGH type. There is a 5 kΩ resistor inside the IC to pull down each input signal line to GND. RC coupling circuits is recommanded for the prevention of
input signal oscillation. RSCPS time constant should be selected in the range 50 ~ 150 ns. (Recommended RS = 100 , CPS = 1 nF)
6) To prevent errors of the protection function, the wiring around RF and CSC should be as short as possible.
7) In the short-circuit protection circuit, please select the RFCSC time constant in the range 1.5 ~ 2 μs.
8) The connection between control GND line and power GND line which includes the NU, NV, NW must be connected to only one point. Please do not connect the control GND
to the power GND by the broad pattern. Also, the wiring distance between control GND and power GND should be as short as possible.
9) Each capacitor should be mounted as close to the pins of the Motion SPM 55 product as possible.
10) To prevent surge destruction, the wiring between the smoothing capacitor and the P and GND pins should be as short as possible. The use of a high frequency non-inductive
capacitor of around 0.1 ~ 0.22 μF between the P and GND pins is recommended.
11) Relays are used at almost every systems of electrical equipments of home appliances. In these cases, there should be sufficient distance between the CPU and the relays.
12) The zener diode or transient voltage suppressor should be adopted for the protection of ICs from the surge destruction between each pair of control supply terminals.
(Recommanded zener diode is 22 V / 1 W, which has the lower zener impedance characteristic than about 15 )
13) Please choose the electrolytic capacitor with good temperature characteristic in CBS. Also, choose 0.1 ~ 0.2 μF R-category ceramic capacitors with good temperature and
frequency characteristics in CBSC.
14) For the detailed information, please refer to the application notes.
Figure 13. Typical Application Circuit
©2014 Fairchild Semiconductor Corporation
FNA51060T3 Rev. C0
12
www.fairchildsemi.com

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