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PDF FNA23512A Data sheet ( Hoja de datos )
| Número de pieza | FNA23512A | |
| Descripción | 1200 V Motion SPM 2 Series | |
| Fabricantes | Fairchild Semiconductor | |
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October 2014
FNA23512A
1200 V Motion SPM® 2 Series
Features
• UL Certified No. E209204 (UL1557)
• 1200 V - 35 A 3-Phase IGBT Inverter, Including
Control ICs for Gate Drive and Protections
• Low-Loss, Short-Circuit-Rated IGBTs
• Very Low Thermal Resistance Using Al2O3 DBC
Substrate
• Built-In Bootstrap Diodes and Dedicated Vs Pins
Simplify PCB Layout
• Separate Open-Emitter Pins from Low-Side IGBTs for
Three-Phase Current Sensing
• Single-Grounded Power Supply Supported
• Built-In NTC Thermistor for Temperature Monitoring
and Management
• Adjustable Over-Current Protection via Integrated
Sense-IGBTs
• Isolation Rating of 2500 Vrms / 1 min.
General Description
The FNA23512A is a Motion SPM® 2 module providing a
fully-featured, high-performance inverter output stage for
AC induction, BLDC, and PMSM motors. These modules
integrate optimized gate drive of the built-in IGBTs to
minimize EMI and losses, while also providing multiple
on-module protection features: under-voltage lockouts,
over-current shutdown, temperature sensing, and fault
reporting. The built-in, high-speed HVIC requires only a
single supply voltage and translates the incoming logic-
level gate inputs to high-voltage, high-current drive
signals to properly drive the module's internal IGBTs.
Separate negative IGBT terminals are available for each
phase to support the widest variety of control algorithms.
Applications
• Motion Control - Industrial Motor (AC 400 V Class)
Related Resources
• AN-9075 - Users Guide for 1200V SPM® 2 Series
• AN-9076 - Mounting Guide for New SPM® 2 Package
• AN-9079 - Thermal Performance of 1200V Motion
SPM® 2 Series by Mounting Torque
Figure 1. Package Overview
Package Marking and Ordering Information
Device
FNA23512A
Device Marking
FNA23512A
Package
SPMCA-A34
Packing Type
Rail
Quantity
6
©2014 Fairchild Semiconductor Corporation
FNA23512A Rev. C0
1
www.fairchildsemi.com
1 page  
Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified.)
Inverter Part
Symbol
Parameter
Conditions
VPN
VPN(Surge)
VCES
± IC
± ICP
Supply Voltage
Supply Voltage (Surge)
Collector - Emitter Voltage
Each IGBT Collector Current
Each IGBT Collector Current (Peak)
Applied between P - NU, NV, NW
Applied between P - NU, NV, NW
TC = 25°C, TJ £ 150°C (Note 4)
TC = 25°C, TJ £ 150°C, Under 1 ms Pulse
Width (Note 4)
PC Collector Dissipation
TJ Operating Junction Temperature
TC = 25°C per One Chip (Note 4)
Rating
900
1000
1200
35
70
171
-40 ~ 150
Unit
V
V
V
A
A
W
°C
Control Part
Symbol
Parameter
VCC Control Supply Voltage
VBS High-Side Control Bias Voltage
VIN Input Signal Voltage
VFO Fault Output Supply Voltage
IFO Fault Output Current
VSC Current Sensing Input Voltage
Conditions
Applied between VCC(H), VCC(L) - COM
Applied between VB(U) - VS(U), VB(V) - VS(V),
VB(W) - VS(W)
Applied between IN(UH), IN(VH), IN(WH),
IN(UL), IN(VL), IN(WL) - COM
Applied between VFO - COM
Sink Current at VFO pin
Applied between CSC - COM
Rating
20
20
-0.3 ~ VCC+0.3
-0.3 ~ VCC+0.3
2
-0.3 ~ VCC+0.3
Unit
V
V
V
V
mA
V
Bootstrap Diode Part
Symbol
Parameter
VRRM
IF
IFP
Maximum Repetitive Reverse Voltage
Forward Current
Forward Current (Peak)
TJ Operating Junction Temperature
Conditions
TC = 25°C, TJ £ 150°C (Note 4)
TC = 25°C, TJ £ 150°C, Under 1 ms Pulse
Width (Note 4)
Rating
1200
1.0
2.0
-40 ~ 150
Unit
V
A
A
°C
Total System
Symbol
Parameter
VPN(PROT) Self-Protection Supply Voltage Limit
(Short-Circuit Protection Capability)
TC
TSTG
VISO
Module Case Operation Temperature
Storage Temperature
Isolation Voltage
Conditions
VCC = VBS = 13.5 ~ 16.5 V, TJ = 150°C,
VCES < 1200 V, Non-Repetitive, < 2 ms
See Figure 2
60 Hz, Sinusoidal, AC 1 Minute, Connection
Pins to Heat Sink Plate
Rating
800
-40 ~ 125
-40 ~ 125
2500
Unit
V
°C
°C
Vrms
Thermal Resistance
Symbol
Parameter
Conditions
Rth(j-c)Q
Rth(j-c)F
Junction-to-Case Thermal Resistance
(Note 5)
Inverter IGBT Part (per 1 / 6 Module)
Inverter FWD Part (per 1 / 6 Module)
Notes:
4. These values had been made an acquisition by the calculation considered to design factor.
5. For the measurement point of case temperature (TC), please refer to Figure 2.
Min.
-
-
Typ. Max.
- 0.73
- 1.26
Unit
°C / W
°C / W
©2014 Fairchild Semiconductor Corporation
FNA23512A Rev. C0
5
www.fairchildsemi.com
5 Page 
Time Charts of SPMs Protective Function
Input Signal
Protection
Circuit State
Control
Supply Voltage
RESET
SET
UVC CR
a1
U VC C D
a2
a3
a4
Output Current
RESET
a6
a7
Fault Output Signal
a5
Figure 11. Under-Voltage Protection (Low-Side)
a1 : Control supply voltage rises: after the voltage rises UVCCR, the circuits start to operate when the next input is applied.
a2 : Normal operation: IGBT ON and carrying current.
a3 : Under-voltage detection (UVCCD).
a4 : IGBT OFF in spite of control input condition.
a5 : Fault output operation starts with a fixed pulse width according to the condition of the external capacitor CFOD.
a6 : Under-voltage reset (UVCCR).
a7 : Normal operation: IGBT ON and carrying current by triggering next signal from LOW to HIGH.
Input Signal
Protection
Circuit State
RESET
Control
Supply Voltage
UVBSR
b1
UVBSD
b2
SET
b3
b4
RESET
b5
b6
Output Current
High-level (no fault output )
Fault Output Signal
Figure 12. Under-Voltage Protection (High-Side)
b1 : Control supply voltage rises: after the voltage reaches UVBSR, the circuits start to operate when the next input is applied.
b2 : Normal operation: IGBT ON and carrying current.
b3 : Under-voltage detection (UVBSD).
b4 : IGBT OFF in spite of control input condition, but there is no fault output signal.
b5 : Under-voltage reset (UVBSR).
b6 : Normal operation: IGBT ON and carrying current by triggering next signal from LOW to HIGH.
©2014 Fairchild Semiconductor Corporation
FNA23512A Rev. C0
11
www.fairchildsemi.com
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