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FSB43004A Schematic ( PDF Datasheet ) - Fairchild Semiconductor

Teilenummer FSB43004A
Beschreibung Motion SPM 45 Series
Hersteller Fairchild Semiconductor
Logo Fairchild Semiconductor Logo 




Gesamt 12 Seiten
FSB43004A Datasheet, Funktion
FSB43004A
Motion SPM® 45 Series
May 2015
Features
• UL Certified No.E209204(UL-1557)
• 40 V, RDS(ON)=3.0 mmax.)3-phase MOSFET
Inverter Module Including Control IC for Gate Drive
and Protection.
• Ceramic Substrate.
• Three Separate Open-Emitter Pins from Low-Side
MOSFETs for Three-Leg Current Sensing.
• Single-Grounded Power Supply for Built-in HVIC.
• Isolation Rating of 800 Vrms/min.
General Description
FSB43004A is a Motion SPM® 45 series that Fairchild
developed based on low-loss Power Trench MOSFET
technology as a compact motor drive inverter solution for
small power applications supplied by low voltage battery.
Applications
Motion Control - Home Appliance / Industrial Motor.
Figure 1. Packing Overview
Package Marking and Ordering Information
Device
FSB43004A
Device Marking
FSB43304A
Package
SPMAA-A22
Packing Type
Rail
Quantity
14
©2011 Fairchild Semiconductor Corporation
FSB43004A Rev. 1.0
1
www.fairchildsemi.com






FSB43004A Datasheet, Funktion
Electrical Characteristics (TJ = 25°C, unless otherwise specified.)
Inverter Part
Symbol
Parameter
Conditions
Min.
BVDSS
Drain-Source Breakdown
Voltage
VIN=0 V, ID=250 A (2nd Notes 1)
40
RDS(ON)
VSD
Drain-Source ON Resistance VCC = VBS = 15 V, VIN = 5 V, ID = 40 A
Source-Drain Diode
Forward Voltage
VCC = VBS = 15 V, VIN = 0 V, ISD = 40 A
-
-
tON
tC(ON)
tOFF
tC(OFF)
trr
Irr
tON
tC(ON)
tOFF
tC(OFF)
trr
Irr
IDSS
Switching Characteristic
Drain-Source Leakage
Current
VPN = 20 V, VCC = VBS = 15 V, ID = 40 A,
VIN = 0 V 5 V, High side, Inductive Load
(2nd Notes 2)
VPN = 20 V, VCC = VBS = 15 V, ID = 40 A,
VIN = 0 V 5 V, Low side, Inductive Load
(2nd Notes 2)
VDS = VDSS
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ. Max.
--
2.1
0.8
1750
900
2600
800
60
3
1900
850
2600
850
60
6
-
3.0
-
-
-
-
-
-
-
-
-
-
-
-
-
250
Unit
V
m
V
ns
ns
ns
ns
ns
A
ns
ns
ns
ns
ns
A
A
2nd Notes:
1. BVDSS is the absolute maximum voltage rating between drain and source terminal of each MOSFET. VPN should be sufficiently lees than this vale considering the effect of the
stray inductance so that VDS should not exceed BVDSS in any case.
2. tON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching time of MOSFET itself under the given gate driving condition inter-
nally. For the detailed information, please see Figure 4.
100% ID 100% ID
trr
VDS
ID
ID VDS
VIN VIN
tON
tC(ON)
10% ID 90% ID 10% VDS
(a) turn-on
tOFF
tC(OFF)
10% VDS
10% ID
(b) turn-off
Figure 4. Switching Time Definition
©2011 Fairchild Semiconductor Corporation
FSB43004A Rev. 1.0
6
www.fairchildsemi.com

6 Page









FSB43004A pdf, datenblatt
©2011 Fairchild Semiconductor Corporation
FSB43004A Rev. 1.0
12
www.fairchildsemi.com

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