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Teilenummer | 2SC4162 |
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Beschreibung | Silicon NPN Power Transistor | |
Hersteller | INCHANGE | |
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Gesamt 2 Seiten INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4162
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min)
·High Switching Speed
·Wide Area of Safe Operation
APPLICATIONS
·Designed for switching regulator and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500 V
VCEO
Collector-Emitter Voltage
400 V
VEBO
Emitter-Base Voltage
7V
IC Collector Current-Continuous 10 A
ICM Collector Current-Peak
PC
Collector Power Dissipation
@TC=25℃
TJ Junction Temperature
Tstg Storage Temperature
20 A
35 W
150 ℃
-55~150
℃
isc Website:www.iscsemi.cn
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Seiten | Gesamt 2 Seiten | |
PDF Download | [ 2SC4162 Schematic.PDF ] |
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