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PDF AM3414 Data sheet ( Hoja de datos )
| Número de pieza | AM3414 | |
| Descripción | 20V N-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | AiT Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AM3414 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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AiT Semiconductor Inc.
www.ait-ic.com
AM3414
SOT-23 MOSFET
20V N-CHANNEL ENHANCEMENT MODE MOSFET
DESCRIPTION
The AM3414 is the N-Channel logic enhancement
mode power field effect transistor is produced
using high cell density.
Advanced trench technology to provide excellent
RDS (ON) low gate charge and operation with gate
as 1.8V.
This device is suitable for use as a load switch or
other general applications.
The AM3414 is available in SOT-23 Package
P-CHANNEL MOSFET
FEATURES
20V/5.0A, RDS(ON) =30mΩ(typ.)@VGS =4.5V
30V/4.5A, RDS(ON) =42mΩ(typ.)@VGS =2.5V
30V/3.8A, RDS(ON) =50mΩ(typ.)@VGS =1.8V
Super high density cell design for extremely
low RDS(ON)
Exceptional on-resistance and Maximum DC
current capability
RoHs Compliant
Available in SOT-23 package
APPLICATIONS
Power Management in Note book
Portable Equipment
DSC
LCD Display inverter
Battery Powered System
ORDERING INFORMATION
Package Type
Part Number
SOT-23
AM3414E3R
E3
AM3414E3VR
Note
V: Green Package
R : Tape & Reel
AiT provides all Pb free products
Suffix “ V “ means Green Package
REV1.0
-NOV 2011 RELEASED -
-1-
1 page  
AiT Semiconductor Inc.
www.ait-ic.com
AM3414
SOT-23 MOSFET
20V N-CHANNEL ENHANCEMENT MODE MOSFET
TYPICAL PERFORMANCE CHARACTERISTICS
TA=25℃ Unless Specified
Figure1. Output Characteristics
Figure2. Drain-Source On Resistance
Figure 3. Drain Source On Resistance
Figure 4. Gate Threshold Voltage
Figure 5. Gate Charge
Figure 6. Drain Source Resistance
REV1.0
-NOV 2011 RELEASED -
-5-
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet AM3414.PDF ] | |
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