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PM1001Q20VR Schematic ( PDF Datasheet ) - AiT Semiconductor

Teilenummer PM1001Q20VR
Beschreibung POWER MANAGEMENT UNIT
Hersteller AiT Semiconductor
Logo AiT Semiconductor Logo 




Gesamt 15 Seiten
PM1001Q20VR Datasheet, Funktion
AiT Semiconductor Inc.
www.ait-ic.com
PM1001
POWER MANAGEMENT UNIT (PMU)
FOUR SEGMENT INDICATOR, SINGLE-CHIP
POWER BANK DEDICATED IC
DESCRIPTION
FEATURES
PM1001 includes a programmable high efficiency
BUCK charger, four LED battery indicators, a Torch
LED driver, a high efficiency Boost converter, and an
over discharge protector. It is suitable for single-cell
lithium-ion/lithium polymer battery charge and
discharge management, and can be widely used in
power bank, handheld devices, PDA, smart phones
and so on.
It integrates high efficiency synchronous BUCK
battery charge management, the maximum charging
current up to 2A; the integrated boost DC/DC can
output the maximum discharge current reaches 1.5A,
and intelligent judgments load insertion and removal,
automatic boost and automatic shutdown; the
integrated battery detection and 4 -segment display,
both in the state of charge or discharge, can
effectively indicate the remaining power of the
battery.
By the external key button, it can easily control the
boost switch on and Torch On/off.
Torch LED can output maximum 50mA of current.
PM1001 also integrates a battery temperature
detection, low battery voltage protection, output over
current /over voltage/short circuit protection circuit to
ensure that chip and system security.
One Key Control
2A charge current
1.5A discharge current
50mA Torch application integration
Automatically start when the device is plugged
into power bank(need other circuits)
Automatically shut down when device is full or
be plugged out 16 seconds
4 segment battery indicator
Low standby power consumption
Automatic shut down when Battery voltage is
lower than 3.1V
Available in QFN20(4X4) Package
APPLICATION
Single-chip Power Bank solution
Single-cell lithium-ion / lithium polymer battery
charger
Fixed 5V Boost Converter
TYPICAL APPLICATION
The PM1001 is available in QFN20(4X4)
package.
ORDERING INFORMATION
Package Type
Part Number
QFN20(4X4)
Q20 PM1001Q20R
PM1001Q20VR
Note
V: Halogen free Package
R: Tape & Reel
AiT provides all RoHS products
Suffix “ V “ means Halogen free Package
NOTE: L1 is the lowest indicator, and L1 is the
reference of L2~L4, it must connect to a LED.
REV1.1
- NOV 2013 RELEASED, DEC 2014 UPDATED -
-1-






PM1001Q20VR Datasheet, Funktion
AiT Semiconductor Inc.
www.ait-ic.com
BLOCK DIAGRAM
PM1001
POWER MANAGEMENT UNIT (PMU)
FOUR SEGMENT INDICATOR, SINGLE-CHIP
POWER BANK DEDICATED IC
REV1.1
- NOV 2013 RELEASED, DEC 2014 UPDATED -
-6-

6 Page









PM1001Q20VR pdf, datenblatt
AiT Semiconductor Inc.
www.ait-ic.com
PM1001
POWER MANAGEMENT UNIT (PMU)
FOUR SEGMENT INDICATOR, SINGLE-CHIP
POWER BANK DEDICATED IC
Choice of Components
1. The selection of booster circuit output capacitor C3. The selection Output Capacitor depends on the
output voltage ripple. In most cases, you want to use low ESR capacitors, such as ceramics and
polymers electrolytic capacitors. If you use a high- ESR capacitor c, you need to carefully review the
converter frequency compensation, and in the output circuit terminal may need to add an additional
capacitor.
2. Choose textures and values of inductor LB and LC. Because the inductor value affects the input and
output ripple voltage and current, so the inductor selection is the key of inductive voltage converter
design. Low equivalent series resistance of the inductor, the power conversion efficiency is the best.
Choose the inductor saturation current rating, make it greater than the steady-state circuit inductor
current peak.
3. Boost converter to choose fast forward voltage drop of the schottky rectifier diodes, so make it low
power consumption and high efficiency. The average current of schottky diode rating should be greater
than the maximum output current of the circuit.
4. Try to use a small internal resistance, fast switching speed of the MOSFET N, so make it low power
consumption and high efficiency, and be ready to heat treatment. AM3400 for the N-channel
enhancement type field effect transistor, RDSON = 27mohm @ VGS = 3.6V, can meet the conditions of
use.
MOSFET N try to use a small internal resistance, fast switching speed, low power consumption and high
efficiency make it, and be ready to heat treatment. AM3400 for the N-channel enhancement type field
effect transistor, RDSON = 27mohm @ VGS = 3.6V, can meet the conditions of use.
5. Temperature protection divider resistor selection RT1/RT2
The VBATT connects the dividing resistors RT1 and RT2, and the NTC connects a negative temperature
coefficient thermistor 10KΩ RNTC, RT1 and RT2 according to battery temperature monitoring range and
thermistor resistance values to determine
Suppose the set battery temperature range TL ~ TH, (TL <TH); negative temperature coefficient
thermistor (NTC). RTL is the resistance at temperature TL, and RTH is the resistance at temperature TH,
RTL> RTH.
At the temperature TL , NTC V_TL the voltage is:
At the temperature TH , NTC voltage V_TH is:
REV1.1
- NOV 2013 RELEASED, DEC 2014 UPDATED -
- 12 -

12 Page





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