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PDF KTD2499 Data sheet ( Hoja de datos )
| Número de pieza | KTD2499 | |
| Descripción | Triple Diffused NPN Transistor | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
KTD2499
TRIPLE DIFFUSED NPN TRANSISTOR
COLOR TV HORIZONTAL OUTPUT APPLICATION.
FEATURES
High Voltage : VCBO 1500V.
Low Saturation Voltage :VCE(sat)=5V(Max.) (IC=4A, IB=0.8A).
High Speed : tf=0.3 S(Typ.)
Built-in Damper Diode.
Collector Metal (Fin) is Fully Covered with Mold Resin.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
VCBO
VCEO
VEBO
IC
Icp
IB
PC
Tj
Tstg
RATING
1500
600
5
6
12
3
50
150
-55 150
UNIT
V
V
V
A
A
W
DIM MILLIMETERS
A
U
C
R
WW
A
B
C
D
16.30 MAX
12.00+_ 0.30
5.50+_ 0.20
1.20 MAX
E 8.00
V F 5.00
G 17.00+_ 0.30
H 0.60+0.15/-0.10
I 2.50
M
NK
I
J 20.0+_ 0.1
K 4.00
D L 2.00
M 2.20 MAX
N 3.05 MAX
HO
5.45
OO
P 3.50
Q 1.00
R 3.00+_ 0.20
123
S 37.0
T 42.0
U Φ3.40+0.15/-0.10
V 10
1. BASE
W8
2. COLLECTOR
3. EMITTER
TO-3P(H)IS
EQUIVALENT CIRCUIT
COLLECTOR
BASE
50Ω (TYP.) EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Forward Voltage (Damper Diode)
Transition Frequency
Collector Output Capacitance
Switching Time
Storage Time
Fall Time
ICBO
IEBO
VEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
-VF
fT
Cob
tstg
tf
TEST CONDITION
VCB=1500V, IE=0
VEB=5V, IC=0
IE=400mA, IC=0
VCE=5V, IC=1A
VCE=5V, IC=4A
IC=4A, IB=0.8A
IC=4A, IB=0.8A
IF=6A
VCE=10V, IC=0.1A
VCB=10V, IE=0, f=1MHz
ICP=4A, IB1(end)=0.8A
fH=15.75kHz
MIN.
-
67
5
8
5
-
-
-
-
-
-
-
TYP.
-
-
-
-
-
-
0.9
1.6
2
95
7.5
0.3
MAX.
1
200
-
25
9
5
1.2
2.0
-
-
10
0.6
UNIT
mA
mA
V
V
V
V
MHz
pF
S
1996. 2. 9
Revision No : 1
1/2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet KTD2499.PDF ] | |
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