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PDF APT68GA60B Data sheet ( Hoja de datos )
| Número de pieza | APT68GA60B | |
| Descripción | High Speed PT IGBT | |
| Fabricantes | Microsemi | |
| Logotipo |  |
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APT68GA60B
APT68GA60S
600V
High Speed PT IGBT
POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved
through leading technology silicon design and lifetime control processes. A reduced Eoff -
VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low
gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short
delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the
TO-247
APT68GA60S
D3PAK
poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even APT68GA60B
when switching at high frequency.
Single die IGBT
FEATURES
• Fast switching with low EMI
• Very Low Eoff for maximum efficiency
• Ultra low Cres for improved noise immunity
• Low conduction loss
• Low gate charge
• Increased intrinsic gate resistance for low EMI
• RoHS compliant
TYPICAL APPLICATIONS
• ZVS phase shifted and other full bridge
• Half bridge
• High power PFC boost
• Welding
• UPS, solar, and other inverters
• High frequency, high efficiency industrial
Absolute Maximum Ratings
Symbol Parameter
Ratings
Vces
IC1
IC2
ICM
VGE
PD
SSOA
TJ, TSTG
TL
Collector Emitter Voltage
Continuous Collector Current @ TC = 25°C 7
Continuous Collector Current @ TC = 100°C
Pulsed Collector Current 1
Gate-Emitter Voltage 2
Total Power Dissipation @ TC = 25°C
Switching Safe Operating Area @ TJ = 150°C
Operating and Storage Junction Temperature Range
Lead Temperature for Soldering: 0.063" from Case for 10 Seconds
600
121
68
202
±30
520
202A @ 600V
-55 to 150
300
Static Characteristics
Symbol Parameter
TJ = 25°C unless otherwise specifi ed
Test Conditions
Min Typ Max
VBR(CES)
VCE(on)
VGE(th)
ICES
IGES
Collector-Emitter Breakdown Voltage
Collector-Emitter On Voltage
Gate Emitter Threshold Voltage
Zero Gate Voltage Collector Current
Gate-Emitter Leakage Current
VGE = 0V, IC = 1.0mA
VGE = 15V,
TJ = 25°C
IC = 40A
TJ = 125°C
VGE =VCE , IC = 1mA
VCE = 600V,
TJ = 25°C
VGE = 0V
TJ = 125°C
VGS = ±30V
600
3
2.0 2.5
1.9
4.5 6
250
2500
±100
Thermal and Mechanical Characteristics
Symbol Characteristic
Min Typ Max
R JC
WT
Torque
Junction to Case Thermal Resistance
Package Weight
Mounting Torque (TO-247 Package), 4-40 or M3 screw
- - 0.24
- 5.9 -
10
Unit
V
A
V
W
°C
Unit
V
μA
nA
Unit
°C/W
g
in·lbf
Microsemi Website - http://www.microsemi.com
1 page  
Typical Performance Curves
10000
Cies
1000
100
Coes
Cres
10
0 100 200 300 400 500
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
FIGURE 17, Capacitance vs Collector-To-Emitter Voltage
APT68GA60B_S
1000
100
10
1
0.1 1
10 100 800
VCE, COLLECTOR-TO-EMITTER VOLTAGE
FIGURE 18, Minimum Switching Safe Operating Area
0.30
0.25
0.20
D = 0.9
0.7
0.15
0.5
Note :
0.10
0.3
0.05
0
10-5
0.1
0.05
SINGLE PULSE
10-4
10-3
t1
t2
Duty Factor D = t1/t2
Peak T J = P DM x Z θJC + T C
10-2 0.1 1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet APT68GA60B.PDF ] | |
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