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BTS50055-1TMC Schematic ( PDF Datasheet ) - Infineon Technologies

Teilenummer BTS50055-1TMC
Beschreibung Smart Highside High Current Power Switch
Hersteller Infineon Technologies
Logo Infineon Technologies Logo 




Gesamt 17 Seiten
BTS50055-1TMC Datasheet, Funktion
Data Sheet BTS50055-1TMC
Smart Highside High Current Power Switch
Reversave
Reverse battery protection by self turn on of
power MOSFET
Features
Overload protection
Current limitation
Short circuit protection
Overtemperature protection
Overvoltage protection (including load dump)
Clamp of negative voltage at output
Fast deenergizing of inductive loads 1)
Low ohmic inverse current operation
Diagnostic feedback with load current sense
Open load detection via current sense
Loss of Vbb protection2)
Electrostatic discharge (ESD) protection
Green product (RoHS compliant)
AEC qualified
Product Summary
Operating voltage
On-state resistance
Noinal current
Load current (ISO)
Short circuit current limitation
Current sense ratio
Vbb(on)
RON
IL(nom)
IL(ISO)
IL(SC)
IL : IIS
PG-TO220-7-4
7
Application
Power switch with current sense diagnostic
1
SM D
feedback for 12 V DC grounded loads
Most suitable for loads with high inrush current
like lamps and motors; all types of resistive and inductive loads
Replaces electromechanical relays, fuses and discrete circuits
5.0 ... 34 V
6.0 m
17 A
70 A
130 A
14 000
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load
current sense, integrated in Smart SIPMOSchip on chip technology. Providing embedded protective functions.
Voltage
source
Voltage
sensor
3 IN
ESD
Logic
Overvoltage
protection
Current
limit
Gate
protection
R bb
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Output
Voltage
detection
Current
Sense
4 & Tab
+ Vbb
OUT 1,2,6,7
IL
Load
I IN Temperature
sensor
VIN
VIS
Logic GND
I IS
IS
5
RIS
PROFET
Load GND
1) With additional external diode.
2) Additional external diode required for energized inductive loads (see page 8).
Infineon Technologies AG
Page 1of 17
2010-April-27






BTS50055-1TMC Datasheet, Funktion
Data Sheet BTS50055-1TMC
Parameter and Conditions
at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified
Symbol
Sense current saturation
Current sense leakage current
IIN = 0:
VIN = 0, IL 0:
Current sense overvoltage protection Tj =-40°C:
Ibb = 15 mA
Current sense settling time21)
Tj = 25...+150°C:
Input
Input and operating current (see diagram page 12)
IN grounded (VIN = 0)
Input current for turn-off22)
IIS,lim
IIS(LL)
IIS(LH)
VbIS(Z)
ts(IS)
IIN(on)
IIN(off)
Values
Unit
min typ max
6.5 -- -- mA
-- -- 0.5 µA
-- 2 --
60 --
62 66
-- V
--
-- -- 500 µs
-- 0.8 1.5 mA
-- -- 80 µA
Truth Table
Normal
operation
Very high
load current
Current-
limitation
Short circuit to
GND
Over-
temperature
Short circuit to
Vbb
Open load
Negative output
voltage clamp
Inverse load
current
Input
current
level
L
H
H
H
L
H
L
H
L
H
L
H
L
L
H
Output
level
L
H
H
H
L
L
L
L
H
H
Z24)
H
L
H
H
Current
Sense
IIS
0
nominal
IIS, lim
0
0
0
0
0
0
<nominal 23)
0
0
0
0
0
Remark
=IL / kilis, up to IIS=IIS,lim
up to VON=VON(Fold back)
IIS no longer proportional to IL
VON > VON(Fold back)
L = "Low" Level
H = "High" Level
Overtemperature reset by cooling: Tj < Tjt (see diagram on page 14)
21) not subject to production test, specified by design
22) We recommend the resistance between IN and GND to be less than 0.5 kfor turn-on and more than
500kfor turn-off. Consider that when the device is switched off (IIN = 0) the voltage between IN and GND
reaches almost Vbb.
23) Low ohmic short to Vbb may reduce the output current IL and can thus be detected via the sense current IIS.
24) Power Transistor "OFF", potential defined by external impedance.
Page 6 of 17
2010-April-27

6 Page









BTS50055-1TMC pdf, datenblatt
Data Sheet BTS50055-1TMC
Typ. current limitation characteristic
IL = f (VON, Tj )
IL [A]
450
400
Typ. input current
IIN = f (VbIN), VbIN = Vbb - VIN
IIN [mA]
1.6
1.4
350 1.2
300
250
200
TJ = 25°C
150
100
50 TJ = -40°C TJ= 150°C
1.0
0.8
0.6
0.4
0.2
0
0 VON(FB) 5
10 15 20
Typ. on-state resistance
RON = f (Vbb, Tj ); IL = 20 A; VIN = 0
RON [mOhm]
VON [V]
0
0 20 40
14
static
12 dynamic
10
8 Tj = 150°C
85°C
6
25°C
4 -40°C
2
0
0 5 10 15 40
Vbb [V]
60 80
VbIN [V]
Infineon Technologies AG
Page 12 of 17
2010-April-27

12 Page





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