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Teilenummer | ITS4142N |
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Beschreibung | Smart High-Side Power Switch | |
Hersteller | Infineon | |
Logo | ||
Gesamt 19 Seiten Smart High-Side Power Switch
for Industrial Applications
1 Channel: 1 x 200mΩ
ITS 4142N
Features
• Short circuit protection
• Current limitation
• Overload protection
• Overvoltage protection
(including load dump)
Product Summary
Overvoltage protection
Operating voltage
On-state resistance
Operating temperature
• Undervoltage shutdown with auto-
restart and hysteresis
• Switching inductive loads
• Clamp of negative voltage at output
with inductive loads
• CMOS compatible input
• Thermal shutdown with restart
• ESD - Protection
• Loss of GND and loss of Vbb protection
• Very low standby current
• Reverse battery protection with external resistor
• Improved electromagnetic compatibility (EMC)
Vbb(AZ)
Vbb(on)
RON
Ta
47 V
12...45 V
200 mΩ
-30...+85 °C
PG-SOT223
Application
• All types of resistive, inductive and capacitive loads
• µC compatible power switch for 12 V and 24 V DC industrial applications
• Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input,
monolithically integrated in Smart SIPMOS technology.
Providing embedded protective functions.
Page 1
2006-03-09
ITS 4142N
Electrical Characteristics
Parameter
Symbol
at Tj = -40...125 °C, Vbb = 15...30 V unless otherwise specified
Input
Continuous input voltage1)
Input turn-on threshold voltage
Input turn-off threshold voltage
Input threshold hysteresis
Off state input current
VIN ≤ 1,8 V
VIN
VIN(T+)
VIN(T-)
∆VIN(T)
IIN(off)
On state input current
Input delay time at switch on Vbb
Input resistance (see page 8)
IIN(on)
td(Vbbon)
RI
Reverse Battery
Reverse battery voltage3)2)
RGND = 0 Ω
RGND = 150 Ω
Continuous reverse drain current2)
Tj = 25 °C
Drain-source diode voltage (VOUT > Vbb)
IF = 1 A
-Vbb
IS
-VON
Values
Unit
min. typ. max.
-102)
-
1.82
-
-
-
-
0.2
20 -
--
150 340
1.5 3
Vbb V
3.0
-
-
µA
-
110
- µs
5 kΩ
V
- - 0.3
- - 45
- - 1A
- 0.6 1.2 V
1At VIN > Vbb, the input current is not allowed to exceed ±5 mA.
2not subject to production test, guaranted by design
3defined by Ptot
Page 6
2006-03-09
6 Page Typ. transient thermal impedance
ZthJA=f(tp) @ 6cm2 heatsink area
Parameter: D=tp/T
10 2
K/W
10 1
ITS 4142N
Typ. transient thermal impedance
ZthJA=f(tp) @ min. footprint
Parameter: D=tp/T
10 2
K/W
10 1
D=0,5
10 0
D=0,2
D=0,1
D=0,05
D=0,02
D=0,01
D=0
10
-1
10
-5
10 -4
10 -3
10 -2
10 -1
10 0
10 1
10 2
s
tp
10 4
Typ. on-state resistance
RON = f(Tj) ; Vbb = 15 V ; Vin = high
D=0,5
D=0,2
10 0 D=0,1
D=0,05
D=0,02
D=0,01
D=0
10
-1
10
-5
10 -4
10 -3
10 -2
10 -1
10 0
10 1
s 10 3
tp
Typ. on-state resistance
RON = f(Vbb); IL = 0.5A ; Vin = high
300
mΩ
300
mΩ
125°C
200 200
150 150
25°C
100 100 -40°C
50 50
0-40 -20 0 20 40 60 80 100 °C 140
Tj
00 5 10 15 20 25 30 35 40 V 50
Vbb
Page 12
2006-03-09
12 Page | ||
Seiten | Gesamt 19 Seiten | |
PDF Download | [ ITS4142N Schematic.PDF ] |
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